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Performance Characteristics of an Aberration-Corrected Jeol JEM 2100F STEM/TEM at the University of South Carolina
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- Journal:
- Microscopy and Microanalysis / Volume 13 / Issue S02 / August 2007
- Published online by Cambridge University Press:
- 05 August 2007, pp. 1166-1167
- Print publication:
- August 2007
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The Effect of Channel Recess and Passivation on 4H-SiC MESFETs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K5.19
- Print publication:
- 2002
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Characterization of GaN and Al0.35Ga0.65N/GaN Heterostructures by Scanning Kelvin Probe Microscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E4.4
- Print publication:
- 2001
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Temperature Dependent Photoluminescence Study of High Silicon doped AIGaAs and the Correlation between the Photoluminescence Spectra and the Doping Level
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- Journal:
- MRS Online Proceedings Library Archive / Volume 570 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 151
- Print publication:
- 1999
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