Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-09-18T05:53:57.465Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of GaN and Al0.35Ga0.65N/GaN Heterostructures by Scanning Kelvin Probe Microscopy

Published online by Cambridge University Press:  21 March 2011

G. Koley  and
M. G. Spencer
G. Koley
Affiliation:
Department of Electrical and Computer EngineeringCornell University, Ithaca, New York 14853
M. G. Spencer
Affiliation:
Department of Electrical and Computer EngineeringCornell University, Ithaca, New York 14853
Get access

Abstract

Scanning Kelvin probe microscopy (SKPM) technique operated in feedback mode has been used to characterize GaN (unintentionally n-type doped, n+ doped and semi-insulating), and Al0.35Ga0.65N/GaN heterostructures (with varying Al0.35Ga0.65N thickness) grown by metalorganic chemical vapor deposition and molecular beam epitaxy. SKPM was used to measure the surface potential on these materials. The measurement technique was calibrated using metal calibration samples of Pt, Au, Ni and Al. The BSBH for n-doped GaN was measured to be 0.7 eV, which is in good agreement with values reported in the literature. Growth features such as dislocations present on the surfaces of III-nitrides were also investigated for their electrical properties using SKPM and non-contact mode atomic force microscopy, simultaneously. The dislocations have been found to be negatively charged for GaN as well as Al0.35Ga0.65N/GaN heterostructure samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E4.4
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pearton, S. J., Zolper, J. C., Shul, R. J., and Ren, F., J. Appl. Phys. 86, 1 (1999).Google Scholar
2. Jain, S.C., Willander, M., Narayan, J., and Overstraeten, R. Van, J. Appl. Phys. 87, 965 (2000).Google Scholar
3. Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W., and Hilsenbeck, J., J. Appl. Phys. 85, 3222 (1999).Google Scholar
4. Ridley, B. K., Appl. Phys. Lett. 77, 990 (2000).Google Scholar
5. Weimann, Nils G., Eastman, L. F., Doppalapudi, D., Ng, H. M., and Moustakas, T. D., Appl. Phys. Lett. 83, 3656 (1998).Google Scholar
6. Murphy, M. J., Chu, K., Wu, H., Yeo, W., Schaff, W. J., Ambacher, O., Eastman, L. F., Eustis, T. J., Silcox, J., Dimitrov, R., and Stutzmann, M., Appl. Phys. Lett. 75, 3653 (1999).Google Scholar
7. Koley, G. and Spencer, M. G., J. Appl. Phys., (2001) (in press).Google Scholar
8. Nyffenegger, Ralph M., Penner, Reginald M., and Schierle, Rainer, Appl. Phys. Lett. 71, 1878 (1997).Google Scholar
9. Schmitz, A. C., Ping, A. T., Khan, M. Asif, Chen, Q., Yang, J. W., and Adesida, I., J. Electron. Mater. 27, 255 (1998).Google Scholar