Electrical conductivity was performed on amorphous thin films of
Ge1–xSe2Pbx (with x = 0, 0.2, 0.4, 0.6 and 0.8) as a
function of temperature in the range 300–450 K. The experimental results
indicate that the conduction is through thermally activated process having two
conduction mechanisms. In the first region at high-temperatures range, the
values of $\sigma _{o}$ suggest that the dominant conduction of charge
carriers changes from the extended states to the localized states in the
band tails at composition x = 0.8. The experimental results have also been
analyzed using Meyer-Neldel Rule. The other one appears in the low
temperatures region and the conductivity has been analyzed using Mott's
variable range hopping conduction. Mott's parameters were calculated for
Ge1–xSe2Pbx films.