Thin films of InSb with different thickness (t = 5, 10 and 15 kÅ) were
deposited on to glass substrate by flash evaporation technique. The
structural and electrical properties were investigated and the effect of
films thickness on films properties was discussed. XRD analysis of the films
as a function of film thickness revealed that crystallinity improves with
film thickness. Temperature dependence of the Hall parameters were studied
in a wide range, 20 < T < 300 K. The temperature variation of the Hall
coefficient and conductivity shows an activated nature with negative
temperature coefficient confirming that the prepared films of InSb are
semiconducting in nature with n-type conductivity. Size effect was observed
as the defect density is much smaller for thicker films and as a result
electrical conductivity of the films increases with increasing film
thickness with the increase of the charge carriers through the film. An
increase in mobility with sample thickness has been observed. The mobility
variations with temperature revealed a transition from lattice to impurity
scattering in the observed temperature range.