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Argon annealing procedure for producing an atomically terraced 4H–SiC (0001) substrate and subsequent graphene growth
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
- Published online by Cambridge University Press:
- 30 July 2012, pp. 1-6
- Print publication:
- 14 January 2013
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- Article
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