Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-26T05:02:26.319Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure property relationships in gallium oxide thin films grown by pulsed laser deposition

Published online by Cambridge University Press:  21 November 2016

Lauren M. Garten ,
Andriy Zakutayev Open the ORCID record for Andriy Zakutayev [Opens in a new window] ,
John D. Perkins ,
Brian P. Gorman ,
Paul F. Ndione  and
David S. Ginley
Lauren M. Garten*
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Andriy Zakutayev
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
John D. Perkins
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Brian P. Gorman
Affiliation:
Colorado School of Mines, Golden, CO 80401, USA
Paul F. Ndione
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
David S. Ginley
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
*
Address all correspondence to Lauren M. Garten at Lauren.garten@nrel.gov
Get access

Abstract

Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (−201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.

Type
Functional Oxides Research Letters
Information
MRS Communications , Volume 6 , Issue 4 , December 2016 , pp. 348 - 353
Check for updates
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Higashiwaki, M., Sasaki, K., Kuramata, A., Masui, T., and Yamakoshi, S.: Development of gallium oxide power devices. Phys. Status Solidi 211, 21 (2014).Google Scholar
2. Zhang, J., Xia, C., Deng, Q., Xu, W., Shi, H., Wu, F., and Xu, J.: Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn. J. Phys. Chem. Solids 67, 1656 (2006).Google Scholar
3. Gogova, D., Schmidbauer, M., and Kwasniewski, A.: Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE. CrystEngComm 17, 6744 (2015).Google Scholar
4. Orita, M., Hiramatsu, H., Ohta, H., Hirano, M., and Hosono, H.: Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures. Thin Solid Films 411, 134 (2002).Google Scholar
5. Bartic, M., Baban, C-I., Suzuki, H., Ogita, M., and Isai, M.: β-gallium oxide as oxygen gas sensors at a high temperature. J. Am. Ceram. Soc. 90, 2879 (2007).CrossRefGoogle Scholar
6. Heinemann, M.D., Berry, J., Teeter, G., Unold, T., and Ginley, D.: Oxygen deficiency and Sn doping of amorphous Ga2O3 . Appl. Phys. Lett. 108, 022107 (2016).Google Scholar
7. Zinkevich, M. and Fritz, A.: Thermodynamic assessment of the gallium–oxygen system. J. Am. Ceram. Soc. 87, 683 (2004).Google Scholar
8. Schewski, R., Wagner, G., Baldini, M., Gogova, D., Galazka, Z., Schulz, T., Remmele, T., Markurt, T., von Wenckstern, H., Grundmann, M., Bierwagen, O., Vogt, P., and Albrecht, M.: Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001). Appl. Phys. Express 8, 011101 (2015).Google Scholar
9. Zacherele, T., Schmidt, P.C., and Martin, M.: Ab initio calculations on the defect structure of β-Ga2O3 . Phs. Rev. B 87, 235206 (2013).Google Scholar
10. Siah, S.C., Brandt, R.E., Lim, K., Schelhas, L.T., Jaramillo, R., Heinemann, M.D., Chua, D., Wright, J., Perkins, J.D., Segre, C.U., Gordon, R.G., Toney, M.F., and Buonassisi, T.: Dopant activation in Sn-doped Ga2O3 investigated by x-ray absorption spectroscopy. Appl. Phys. Lett. 107, 252103 (2015).Google Scholar
11. Matsuzaki, K., Hiramatsu, H., Nomura, K., Yanagi, H., Kamiya, T., Hirano, M., and Hosono, H.: Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor. Thin Solid Films 496, 37 (2006).Google Scholar
12. Lovejoy, T.C., Chen, R., Zheng, X., Villora, E.G., Shimamura, K., Yoshikawa, H., Yamashita, Y., Ueda, S., Kobayashi, K., Dunham, S.T., Ohuchi, F.S., and Olmstead, M.A.: Band bending and surface defects in β-Ga2O3 . Appl. Phys. Lett. 100, 181602 (2012).CrossRefGoogle Scholar
Supplementary material: File

Garten supplementary material

Garten supplementary material 1

Download Garten supplementary material(File)
File 1.9 MB