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Towards control of plasma-induced surface roughness: simultaneous to plasma etching deposition

Published online by Cambridge University Press:  28 October 2011

G. Kokkoris
G. Kokkoris*
Affiliation:
Institute of Microelectronics, National Center for Scientific Research “Demokritos’’, Athens, Greece
*
ae-mail: gkok@imel.demokritos.gr
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Abstract

The potential of simultaneous to etching deposition for surface roughness control is investigated with a stochastic modeling framework for morphology evolution in (2+1) d. It is predicted that ion-driven etching under simultaneous deposition of etch-inhibitors (e.g., impurities coming from the wafer surroundings, the reactor walls, or the plasma bulk) not only induces roughness formation with a linear dependence on time, but can also induce periodic dots on the surface. The surface roughness can be controlled by regulating the amount of etch-inhibitors.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 56 , Issue 2: Topical Issue: 18th International Colloquium on Plasma Processes (CIP 2011) , November 2011 , 24012
Copyright
© EDP Sciences, 2011

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