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Study of transient processes in nitrogenby measurements of dynamic breakdown voltages
Published online by Cambridge University Press: 28 January 2005
Abstract
In this paper the measurements of the dynamic breakdown
voltages Ub for linearly rising pulses in nitrogen at low
pressure are presented. The measurements were carried out for the
rates of voltage rise k up to $300\, {\rm V\,s}^{-1}$. Dependence of the
breakdown voltages, delay times and electron yields on the rate of
rise were obtained experimentally and theoretically
under different conditions. It was found that
the overvoltage $\overline {\Delta U_b}$
and the mean effective
electron yield $\overline {YP}$
is proportional to $\sqrt k$
(Y
is a number of generated electrons in the interelectrode space per
second and P the breakdown probability), while the statistical
time delay $\overline t_s$
is proportional to $1/\sqrt k$
. In the
second part, the experimental breakdown voltage distributions were
obtained, fitted by theoretical distributions and some breakdown
parameters relevant to experimental conditions were determined.
Based on the approximate analytical and numerical models, the
dependence of the effective secondary electron yield γ on
the overvoltage and on the rate of voltage rise were derived from
these measurements. It was found that γ varies linearly
with the overvoltage for a constant k, and the slope of γ
is proportional to $\sqrt k$
.
- Type
- Research Article
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- Copyright
- © EDP Sciences, 2005
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