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Sixteen resistive states of a tunnel junction with a composite barrier

Published online by Cambridge University Press:  24 June 2010

L. B. Zhang ,
M. H. Tang  and
F. Yang
L. B. Zhang
Affiliation:
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Hunan, 411105, P.R. China Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University, Ministry of Education, Xiangtan, Hunan, 411105, P.R. China
M. H. Tang*
Affiliation:
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Hunan, 411105, P.R. China Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University, Ministry of Education, Xiangtan, Hunan, 411105, P.R. China
F. Yang
Affiliation:
Faculty of Materials, Optoelectronics and Physics, Xiangtan University, Hunan, 411105, P.R. China Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University, Ministry of Education, Xiangtan, Hunan, 411105, P.R. China
*
mhtang@xtu.edu.cn
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Abstract

A new model for a tunnel junction with a ferroelectric-ferromagnetic-ferroelectric composite barrier and two magnetic electrodes is evaluated. By reversing the electric polarisation in the ferroelectric layers and the magnetisation in the electrodes independently or simultaneously, sixteen distinct resistive states are obtained successfully. The tunnelling electroresistance ratio, the spin-filtering ratio and the conductance as functions of the barrier thickness, the exchange splitting and the electric polarisation are also investigated in detail. Compared with conventional tunnel junctions, our theoretical model presents more resistive states that potentially may lead to a tremendous increase in multivalue logic state storage in next generation memory cells.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 51 , Issue 1 , July 2010 , 10604
Copyright
© EDP Sciences, 2010

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