Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-27T02:56:42.200Z Has data issue: false hasContentIssue false
  • English
  • Français

Scanning room temperature photoluminescence in SiNx:H layers

Published online by Cambridge University Press:  15 July 2004

I. Tarasov ,
M. Dybiec ,
S. Ostapenko ,
A. Rohatgi ,
V. Yelundur  and
A. M. Gabor
I. Tarasov
Affiliation:
University of South Florida, 4202 E Fowler Avenue, Tampa, Florida, 33620, USA
M. Dybiec
Affiliation:
University of South Florida, 4202 E Fowler Avenue, Tampa, Florida, 33620, USA
S. Ostapenko*
Affiliation:
University of South Florida, 4202 E Fowler Avenue, Tampa, Florida, 33620, USA
A. Rohatgi
Affiliation:
Georgia Institute of Technology, 777 Atlanta Dr., Atlanta, GA 30332, USA
V. Yelundur
Affiliation:
Georgia Institute of Technology, 777 Atlanta Dr., Atlanta, GA 30332, USA
A. M. Gabor
Affiliation:
Evergreen Solar, 259 Cedar Hill St., Marlboro, MA 01752, USA
*
ostapenk@eng.usf.edu
Get access

Abstract

We report on spectroscopic photoluminescence (PL) mapping of solar-cell-grade mc-Si ribbon wafers. We observe under UV excitation a broad visible emission from the SiNx:H layer. The samples covered with SiNx:H were subjected to rapid thermal processing at different temperatures, and PL maps were measured before and after treatment. We observed that after RTP treatment the intensity of the PL band was significantly increased, which indicates further reduction of non-radiative defects. The magnitude of these increases depends on the RTP conditions. The visible PL band exhibits a reversible photo quenching of the intensity under 325 nm HeCd laser excitation. The PL intensity can be recovered by annealing with the rate exhibiting a thermally activated behavior. The observed PL photo quenching reveals a metastable process in the SiNx:H film under UV excitation. We demonstrate the possibility of creating a reversible luminescence micro-pattern on the SiNx:H layer using a focused UV laser beam.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 289 - 291
Copyright
© EDP Sciences, 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Yelundur, V., Rohatgi, A., Ebong, A., Gabor, A. M., Hanoka, J., Wallace, R. L., J. Electron. Mater. 30, 526 (2001) CrossRef
Ostapenko, S., Tarasov, I., Kalejs, J. P., Haessler, C., Reisner, E. U., Semicond. Sci. Technol. 269, 588 (2000)
I. Tarasov, S. Ostapenko, V. Yelundur, A. Rohatgi, to be published
Giorgis, F., Mandracci, P., Dal Negro, L., Mazzoleni, C., Pavesi, L., J. Non- Cryst. Solids 266–269, 588 (2000) CrossRef
Duerinckx, F., Szlufcik, J., Solar Energy Mater. Cells 72, 231 (2002) CrossRef
Kakalios, J., Street, R. A., Jackson, W. B., Phys. Rev. Lett. 59, 1037 (1987) CrossRef
Tober, E. D., Kanicki, J., Crowder, M. S., Appl. Phys. Lett. 59, 1723 (1991) CrossRef