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Reverse leakage mechanisms of liquid metal contacts onto II–VI group semiconductor (Ga/p-WSe2)

Published online by Cambridge University Press:  30 April 2013

Achamma Bobby ,
Partha Sarathi Gupta  and
Bobby Kachappilly Antony
Achamma Bobby*
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826 004, India
Partha Sarathi Gupta
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826 004, India
Bobby Kachappilly Antony
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826 004, India
*
ae-mail: achammajohn@yahoo.com
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Abstract

The reverse leakage current mechanisms of Schottky diodes prepared using liquid gallium on as-grown and cleaved tungsten diselenide surfaces were investigated by current-voltage method for the first time. The major leakage mechanism has been identified as tunneling current along with a small contribution of thermionic emission current. The leakage tunneling current is found to be predominant in uncleaved diode compared to that in cleaved one. This is related to the magnitude of interface state density and interfacial inhomogeneities. The inhomogeneous nature of the interface of the fabricated diodes is ascribed to be the reason behind its soft reverse characteristics.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 62 , Issue 2 , May 2013 , 20104
Copyright
© EDP Sciences, 2013

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References

Abrams, B.L., Wilcoxon, J.P., Crit. Rev. Solid State Mater. Sci. 30, 153 (2005)CrossRef
Wilcoxon, J.P., Newcomer, P.P., Samara, G.A, J. Appl. Phys. 81, 7934 (1997)CrossRef
Thurston, T.R., Wilcoxon, J.P., J. Phys. Chem. B 103, 11 (1999) CrossRef
Aruchamy, A. (Ed.), Photoelectro Chemistry and Photovoltaics of Layered Semiconductors (Kluwar Academic Publishers, Dordrecht, 1992)CrossRefGoogle Scholar
Schutte, W.J., De Boer, J.L., Jellinek, F., J. Solid State Chem. 70, 207 (1987)CrossRef
Rettenberger, A., Leiderer, P., Phys. Rev. B 56, 12092 (1997)CrossRef
Klein, A., Dolatzoglou, P., Lux-Steiner, M., Bucher, E., Solar Energy Mater. Solar Cells 46, 175 (1997)CrossRef
Yang, J., Yao, H., Liu, Y., Zhang, Y., Nano. Res. Lett. 3, 481 (2008)CrossRef
Tomm, Y., Fiecht, S., J. Ceram. Process. Res. 6, 141 (2005)
Salitra, G., Hodes, G., Klein, E., Tenne, R., Thin Solid Films 245, 180 (1994) CrossRef
Yoshida, S., Terada, Y., Yokota, M., Takeuchi, O., Mera, Y., Shigekawa, H., Appl. Phys. Expr. 6, 016601 (2013)CrossRef
Liu, B., Han, Y., Gao, C., Ma, Y., Peng, G., Wu, B., Liu, C., Wang, Y., Hu, T., Cui, X., Ren, W., Li, Y., Su, N., Liu, H., Zou, G., J. Phys. Chem. C 114, 14251 (2010)CrossRef
Jiang, H., J. Phys. Chem. C 116, 7664 (2012)CrossRef
Nicolay, G., Claessen, R., Reinert, F., Strocov, V.N., Hüfner, S., Gao, H., Hartmann, U., Bucher, E., Surf. Sci. 432, 95 (1999)CrossRef
Fang, H., Chuang, S., Chia Chang, T., Takei, K., Takahashi, T., Javey, A., Nano Lett. 12, 3788 (2012)CrossRef
Mathai, A.J., IEEE Trans. Electron Devices 58, 4283 (2011)CrossRef
Sze, S.M., Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981)Google Scholar
Singh, Y., Kumar, M.J., IEEE Trans. Electron Devices 48, 2695 (2001)CrossRef
Rhoderick, E.H., Williams, R.H., Metal-Semiconductor Contacts, 2nd edn. (Clarendon Press, Oxford, 1988)Google Scholar
Wittmer, M., Phys. Rev. B 43, 4385 (1991)CrossRef
Arslan, E., Altındal, S., Ozcelik, S., Ozbay, E., Semicond. Sci. Technol. 24, 075003 (2009)CrossRef
Bobby, A., Gupta, P.S., Antony, B.K., Eur. Phys. J. Appl. Phys. 60, 10104 (2012)CrossRef
Mathai, A.J., Patel, K.D., Cryst. Res. Technol. 45, 717 (2010)CrossRef
Mathai, A.J., Patel, K.D., Srivastava, R., Thin Solid Films 518, 4417 (2010)CrossRef