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Resistive switching of Pt/ZrO2/YBa2Cu3O7 sandwiches

  • Zheng Wen (a1) (a2), Kun Li (a1), Di Wu (a1) and Aidong Li (a1)

Abstract

Resistive switching characteristics of Pt/ZrO2/YBa2Cu3O7 sandwiches are investigated for nonvolatile memory applications. Reproducible bipolar resistance switching with an on/off current ratio about 60 and long data retention are achieved. The conduction mechanism obeys Schottky emission in the low resistance state, while Poole-Frankel conduction is predominant in the high resistance state. The resistance switching of Pt/ZrO2/YBa2Cu3O7 sandwiches can be ascribed to migration and redistribution of oxygen vacancies around the ZrO2/YBa2Cu3O7 interface, which switches the conduction between the interface-controlled and the bulk-controlled mechanisms.

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Corresponding author

ae-mail: diwu@nju.edu.cn

References

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Resistive switching of Pt/ZrO2/YBa2Cu3O7 sandwiches

  • Zheng Wen (a1) (a2), Kun Li (a1), Di Wu (a1) and Aidong Li (a1)

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