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Resistive switching of Pt/ZrO2/YBa2Cu3O7 sandwiches

Published online by Cambridge University Press:  03 March 2014

Zheng Wen ,
Kun Li ,
Di Wu  and
Aidong Li
Zheng Wen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P.R. China College of Physics, Qingdao University, Qingdao 266071, P.R. China
Kun Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P.R. China
Di Wu*
Affiliation:
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P.R. China
Aidong Li
Affiliation:
National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Nanjing University, Nanjing 210093, P.R. China
*
ae-mail: diwu@nju.edu.cn
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Abstract

Resistive switching characteristics of Pt/ZrO2/YBa2Cu3O7 sandwiches are investigated for nonvolatile memory applications. Reproducible bipolar resistance switching with an on/off current ratio about 60 and long data retention are achieved. The conduction mechanism obeys Schottky emission in the low resistance state, while Poole-Frankel conduction is predominant in the high resistance state. The resistance switching of Pt/ZrO2/YBa2Cu3O7 sandwiches can be ascribed to migration and redistribution of oxygen vacancies around the ZrO2/YBa2Cu3O7 interface, which switches the conduction between the interface-controlled and the bulk-controlled mechanisms.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 65 , Issue 3 , March 2014 , 31303
Copyright
© EDP Sciences, 2014

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