Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T02:48:13.276Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoelectric studies of gallium monosulfide single crystals

Published online by Cambridge University Press:  25 October 2005

G. A. Gamal  and
M. I. Azad
G. A. Gamal*
Affiliation:
Chemical Engineering Department, Clarkson University, Postdeam, NY, 13699, USA
M. I. Azad
Affiliation:
Physics Department, State University of New York (SUNY), Potsdam, NY, USA
*
Gamal@clarkson.edugagamal99@yahoo.com
Get access

Abstract

Photoconductivity studies were carried out on GaS single crystals prepared from melt by directional solidification. We studied the effect of light intensity, applied voltage on both the photoconductivity and the lifetime of carriers. The V-I characteristics and the absorption spectra were checked for different sample thickness. The present investigation was extended to study the spectral distribution of the photocurrent for GaS. It was found that the photocurrent curves are practically independent on the bias voltage. The energy gap for GaS was found to be 2.5 eV.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 32 , Issue 1 , October 2005 , pp. 1 - 5
Copyright
© EDP Sciences, 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Alzhdanov, M.A., Nadzhafzad, M.D., Seidov, Z.Y., Phys. Solid State 20–21, 41 (1999)
Alekperov, O.Z, Zarabakiev, M.Z., Inorg. Mater. 10, 971 (1998)
Chen, X.Y., Hou, X.Y., Cao, X.A, Ding, X.M., Chen, L.Y., Zhao, G.Q., Wang, X., J. Cryst. Growth 1–2, 151 (1997)
Okamoto, N., Tanka, H., Mater. Sci. Semi-Cond. Proc. 1, 13 (1999) CrossRef
Lezell, M.R., O'Brien, P., Otway, D.J., Park, J.H., Chem. Mater. 12, 3430 (1999) CrossRef
Suh, S., Hoffman, D.M., Chem. Mater. 9, 2794 (2000) CrossRef
Aydinli, A., Gasanly, N.M., Goksen, K., J. Appl. Phys. 12, 7144 (2000) CrossRef
Gasanly, N.M., Aydinli, A., Ozkan, H., Kocabas, C., Solid State Commun. 3, 147 (2000) CrossRef
Beasley, J.D., Appl. Optics 6, 1000 (1994) CrossRef
Griscom, L.S., Adam, J.L., Binnemans, K., J. Non-Cryst. Solids 257, 383 (1999) CrossRef
Segura, A., Chevy, A., Phys. Rev. B-Condensed Matter 7, 4601 (1994) CrossRef
Gamal, G.A., Nassary, M.M., Hussein, S.A., Cryst. Res. Technol. 27, 997 (1992)
McDevitt, S., Deam, B. Em., Ryding, D.G., Scheltens, F.J., Mahajan, S., Mater. Lett. 4, 451 (1986) CrossRef
Y.Y. Loginov, P.D. Brown, N. Thompson, G.L. Russell, J. Wood, Microscopy of Semiconducting Materials, Inst. Phys. Conf. Ser. 100, edited by A.G. Gullis, I.L. Hutchison (Inst. Phys. Bristal, 1989), p. 433
Ovshinsky, S.R., Phys. Rev. Lett. 21, 1450 (1968) CrossRef
A.T. Nagat, S.A. Hussein, Y.H. Gameel, G.A. Gamal, Phys. Stat. Solidi A 121, K 201 (1990)
Nassary, M.M., Hussein, S.A., Belal, A.E., H.A. El-Sheirh Phys. Stat. Solidi A 145, 151 (1994) CrossRef
Zhitor, V.F., Moldovyan, N.A., Redautson, S.I., Sov. Phys. Semicond. 13, 495 (1979)
S.M.S. Ryvkin, Potenitiometric effects in semiconductors (New York, 1964)
A.T. Nagat, G.A. Gamal, Y.H Gameel, N.M. Mohamed, Phys. Stat. Solidi A 119, K 47 (1990)
T.S. Moss, Proc. Phys. Soc. A 64 (1951)
Smith, R.A., Philos. Mag. Suppl. 2, 81 (1953)
J.I. Pankove, Optical Process in Semiconductors (Dover, New York, 1975), Vol. 35