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Optical properties of Zn doped GaP single crystals

Published online by Cambridge University Press:  19 June 2008

M. M. El-Nahass ,
H. S. Metwally ,
H. E. A. El-Sayed ,
F. Abd El-salam  and
H. A. Hassan
M. M. El-Nahass*
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt
H. S. Metwally
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt
H. E. A. El-Sayed
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt
F. Abd El-salam
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt
H. A. Hassan
Affiliation:
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt
*
prof_nahhas@yahoo.com
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Abstract

The optical properties of Zn doped GaP single crystals were investigated in the spectral range of 200–2500 nm. It was found that the spectral distributions of R, n, $\varepsilon_{1}$ reflect sharp structure due to valance conduction band transitions (Eg, E0, E1 and E2) having the energies 2.17, 2.706, 3.708 and 5.245 eV, respectively. The tested samples exhibit indirect allowed optical transition associated with two phonons of energies 24.5 and, 58.7 meV. The free carrier concentration was found to be 2.11 × 1018 cm−3. The oscillation energy Eosc, dispersion energy Ed, lattice dielectric constant $\varepsilon_{L}$, and optical dielectric constant at infinite frequency $\varepsilon_{\infty}$ were, also, calculated and found to be the values 4.4 eV, 38 eV, 10.27 and 9.7, respectively.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 43 , Issue 1 , July 2008 , pp. 31 - 36
Copyright
© EDP Sciences, 2008

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