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Optical characterisation of chemically deposited Pb(1−x) CdxS films and a Pb1−xCdxS(n)/Si(p) heterojunction

Published online by Cambridge University Press:  14 February 2007

A. Ounissi ,
N. Ouddai  and
S. Achour
A. Ounissi*
Affiliation:
Laboratory of Advanced Electronics, LEA, Department of Electronics, University of Batna, 05000 Batna, Algeria
N. Ouddai
Affiliation:
Laboratory: Chimie et Chimie de l'Environnement, Department of Chemistry, University of Batna, 05000 Batna, Algeria
S. Achour
Affiliation:
Laboratory: Céramiques de Constantine (CC), Department of physics, University of Constantine, 25000 Constantine, Algeria
*
ounissi_abdelhamid@hotmail.com
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Abstract

The optical study of transmission T(λ) and reflection R(λ) spectra has enabled us to determine compounds that possess gaps close to 1.5 eV. The conditions for preparation of a ternary compound whose gap is 1.48 eV have been used to create a Pb1−xCdxS-n/Si-p heterojunction. The heterojunction thus obtained presented a low yield (0.5%), as determined from the study of the J–V characteristic. In order to improve its efficiency, we have studied the effect of thermal treatment on the prepared heterojunction. X-ray diffraction has been used to determine the variation in the crystalline parameter and the ratio of cadmium in the Pb1−xCdxS compound, and the dependence of its gap on the cadmium concentration. We have also used the C–V technique to determine the average concentration of impurities in the Pb1−xCdxS compound.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 37 , Issue 3 , March 2007 , pp. 241 - 245
Copyright
© EDP Sciences, 2007

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References

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