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Nucleation of partial dislocations from a surface-step in semiconductors:a first approach of the mobility effect*

Published online by Cambridge University Press:  15 May 1998

S. Brochard ,
J. Rabier  and
J. Grilhé
S. Brochard*
Affiliation:
Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, BP 179, 86960 Futuroscope Cedex, France
J. Rabier
Affiliation:
Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, BP 179, 86960 Futuroscope Cedex, France
J. Grilhé
Affiliation:
Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, BP 179, 86960 Futuroscope Cedex, France
*
Sandrine.Brochard@lmp.univ-poitiers.fr
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Abstract

The nucleation of perfect or partial dislocations from a surface-step of a f.c.c. or diamond-like material is frequently observed. In a recent paper, it is shown how the "stress—stacking-fault energy" plane can be divided into three zones where a partial or a complete dislocation will or will not nucleate. In compound semiconductors, dislocations can dissociate into α or β partial dislocations with mobilities appreciably different. In this paper, this effect is taken into account and yields to large modifications in the partial or perfect dislocations nucleation conditions. The case of GaAs is specially examined.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 2 , Issue 2 , May 1998 , pp. 99 - 105
Copyright
© EDP Sciences, 1998

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Footnotes

*

This paper was presented at D.E.S. 97 held at Poitiers, the 4 and 5 September 1997.

References

* This paper was presented at D.E.S. 97 held at Poitiers, the 4 and 5 September 1997.