Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-06-27T18:07:44.815Z Has data issue: false hasContentIssue false
  • English
  • Français

Modelling, analysis, and experimental study of SiC JFET body diode

Published online by Cambridge University Press:  23 December 2010

T. Ben Salah ,
Y. Lahbib  and
H. Morel
T. Ben Salah*
Affiliation:
University of Tunis El Manar, ENIT-L.S.E., BP 37 le Belvédère, 1002 Tunis, Tunisia Université de Lyon, Lab. Ampère, INSA-Lyon, Lyon, France University of 7 November at Carthage, École Supérieure de Technologie et d'Informatique (ESTI), 1002 Tunis, Tunisia
Y. Lahbib
Affiliation:
University of 7 November at Carthage, École Supérieure de Technologie et d'Informatique (ESTI), 1002 Tunis, Tunisia
H. Morel
Affiliation:
Université de Lyon, Lab. Ampère, INSA-Lyon, Lyon, France
*
tarek.bensalah@gmail.com
Get access

Abstract

Within Silicon Carbide Junction Field Effect Transistor (SiC-JFET) model, body diode is not extensively studied and almost under-researched. Body diode remains a complex device to study particularly during switching transients. In this paper, the JFET body diode is experimentally demonstrated to be a power PiN diode. Finite element method model based on the device geometry and SiC material is used to accurately simulate this diode. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for design parameters of the SiC-JFET body diode. A comparative study between experimental data and simulation results is given to validate the device model and associate parameters.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 53 , Issue 1 , January 2011 , 10301
Copyright
© EDP Sciences, 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Nava, F., Bertuccio, G., Cavallini, A., Vittone, E., Meas. Sci. Technol. 19, 102001 (2008) CrossRef
Funaki, T., Balda, J.C., Junghans, J., Kashyap, A.S., Mantooth, H.A., Barlow, F., Kimoto, T., Hikihara, T., IEEE Trans. Power Electron. 22, 1321 (2007) CrossRef
Scajev, P., Jarasiunas, K., J. Phys. D: Appl. Phys. 42, 055413 (2009) CrossRef
Kuang, S., IEEE Trans. Electron. Devices 56, 337 (2009)
Zaho, J.H., MRS Bull. 30, 293 (2005) CrossRef
Veliadis, V., Snook, M., McNutt, T., Hearne, H., Potyraj, P., Lelis, A., Scozzie, C., IEEE Electron. Device Lett. 29, 1325 (2008) CrossRef
B. Allebrand, H.P. Nee, Comparison of commutation transients of inverters with silicon carbide JFETs with and without body diodes, in Proc. Nordic Workshop on Power and Industrial Electronics (NORPIE), Tronheim, Norway, 2004, pp. 100–104
Boughrara, N., Moumen, S., Lefebvre, S., Khatir, Z., Friedrichs, P., Faugieres, J.-C., IEEE Electron. Device Lett. 30, 51 (2009) CrossRef
Zhang, Y., Sheng, K., Su, M., Zhao, J.H., Alexandrov, P., Fursin, L., IEEE Electron. Device Lett. 28, 404 (2007) CrossRef
Allard, B., Garrab, H., Morel, H., Int. J. Electron. 92, 189 (2005) CrossRef
Ben Salah, T., Lahbib, Y., Morel, H., Eur. Phys. J. Appl. Phys. 48, 3 (2009) CrossRef
Masmoudi, N., Mbairi, D., Allard, B., Morel, H., IEEE Trans. Ind. Electron. 48, 864 (2001) CrossRef
A.S. Kashyap, P.L. Ramavarapu, S.M. Lal, T.R. McNutt, A.B. Lostetter, T. Funaki, H.A. Mantooth, Compact circuit simulation model of silicon carbide static induction and junction field effect transistors, in IEEE Workshop on Computers in Power Electronics (COMPEL'04), Urbaba-Champaign, IL, USA, 2004, pp. 29–35
Z. Chen, Finite element methods and their applications (Springer, 2005)
R. Mousa, D. Planson, H. Morel, C. Raynaud, High temperature characterization of SiC-JFET and modelling, in Proc. Eur. Conf. Power Electronics and Application (EPE'07), Aalborg, Denmark, 2007
P. Lauritzen, Compact models for power semiconductor devices, Technical Report, 2000, http://www.ee.washington.edu/research/pemodels/
Bryant, A., Lu, L., Santi, E., Palmer, P., Hudgins, J., IEEE Trans. Power Electron. 23, 198 (2008) CrossRef
Ben Salah, T., Ghedira, S., Garrab, H., Morel, H., Riseletto, D., Besbes, K., Int. J. Numer. Model.: Electron. Networks Dev. Fields 6, 283 (2007) CrossRef
Allard, B., Garrab, H., Ben Salah, T., Morel, H., Ammous, K., Besbes, K., IEEE Trans. Power Electron. 23, 491 (2008) CrossRef
Ben Salah, T., Buttay, C., Allard, B., Morel, H., Ghedira, S., Besbes, K., IEEE Trans. Power Electron. 22, 13 (2007) CrossRef
Garrab, H., Allard, B., Morel, H., Ammous, K., Ghedira, S., Ammimi, A., Besbes, K., Guichon, J.M., IEEE Trans. Power Electron. 20, 660 (2005) CrossRef
Dessis-ISE Version 10: User's Guide Manual (2005), http://www.synopsys.com/
MDRAW-ISE Version 10: User's Guide Manual, ISE (2005), http://www.synopsys.com/
T. Ben Salah, D. Risaletto, C. Raynauld, K. Besbes, S. Ghedira, D. Bergogne, D. Planson, H. Morel, Electrical characterization of 5 kV SiC bipolar diodes in switching transient regime, in Proc. Eur. Conf. Power Electronics and Application (EPE'07), Aalborg, Denmark, 2007, pp. 1–8