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Manifestation of defects in phonon spectra of binary zinc-blende compounds

Published online by Cambridge University Press:  15 July 2004

J. Polit ,
E. M. Sheregii ,
J. Cebulski ,
M. Pociask ,
A. Kisiel ,
A. Mycielski ,
B. V. Robouch ,
E. Burattini ,
A. Marcelli  and
M. Cestelli Guidi
...Show all authors
J. Polit*
Affiliation:
Institute of Physics, Rzeszow University, Rejtana 16A, 35-310 Rzeszów, Poland
E. M. Sheregii
Affiliation:
Institute of Physics, Rzeszow University, Rejtana 16A, 35-310 Rzeszów, Poland
J. Cebulski
Affiliation:
Institute of Physics, Rzeszow University, Rejtana 16A, 35-310 Rzeszów, Poland
M. Pociask
Affiliation:
Institute of Physics, Rzeszow University, Rejtana 16A, 35-310 Rzeszów, Poland
A. Kisiel
Affiliation:
Instytut Fizyki im. Mariana Smoluchowskiego, Uniwersytet Jagielloński, Reymonta 4, 30-059 Krakow, Poland
A. Mycielski
Affiliation:
Institute of Physics PAS, al. Lotnikow 32/46, 02-668 Warsaw, Poland
B. V. Robouch
Affiliation:
Laboratori Nazionali di Frascati INFN, DAFNE-L lab., C.P. 13, 00044 Frascati (RM), Italy
E. Burattini
Affiliation:
Laboratori Nazionali di Frascati INFN, DAFNE-L lab., C.P. 13, 00044 Frascati (RM), Italy Dipartimento di Informatica, Universita degli Studi di Verona, Strada Le Grazie 15, 37134 Verona, Italy
A. Marcelli
Affiliation:
Laboratori Nazionali di Frascati INFN, DAFNE-L lab., C.P. 13, 00044 Frascati (RM), Italy
M. Cestelli Guidi
Affiliation:
Laboratori Nazionali di Frascati INFN, DAFNE-L lab., C.P. 13, 00044 Frascati (RM), Italy Dipartimento di Fisica, Universita La Sapienza, p. le A. Moro 2, Rome, Italy
M. Piccinni
Affiliation:
Laboratori Nazionali di Frascati INFN, DAFNE-L lab., C.P. 13, 00044 Frascati (RM), Italy Dipartimento di Scienze Geologiche, Universita di Roma-3, Largo S. Leonardo Murialdo 1, 00146 Rome, Italy
P. Calvani
Affiliation:
Dipartimento di Fisica, Universita La Sapienza, p. le A. Moro 2, Rome, Italy
A. Nucara
Affiliation:
Dipartimento di Fisica, Universita La Sapienza, p. le A. Moro 2, Rome, Italy
*
sheregii@univ.rzeszow.pl
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Abstract

It is interesting to consider the problem of the presence of defects in the semiconductor binary compounds by observing their elemental tetrahedron distortions, caused by the creation of vacancies and interstitial atoms within the tetrahedra and so on. Our model thus considers the system A(VzxZ$_{1-x}$) and (A$_{1-y}$Vay)Z as composed of five defect tetrahedron configurations where A is a cation atom, Z an anion atom, Va-cation vacancy, Vz-anion vacancy. In this communication we present far IR (FIR) spectra obtained at the DAFNE facility of Laboratori Nazionali di Frascati (INFN) using its synchrotron radiation. Two samples of CdTe are considered: sample-1 was grown by the PVT technique and sample-2 using the same technique but on the basis of, polycrystalline CdTe previously purified from oxygen in hydrogen atmosphere.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 321 - 324
Copyright
© EDP Sciences, 2004

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