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I-V characteristics of Ag/OD-MO/Ag surface-type diode fabricated by deposition of organic film from solution under the effect of an electric field

Published online by Cambridge University Press:  23 April 2010

M. Saleem ,
M. H. Sayyad ,
Kh. S. Karimov ,
Z. M. Karieva ,
K. Y. Cheong  and
A. F. Mohd Noor
M. Saleem*
Affiliation:
GIK Institute of Engineering Sciences and Technology, Topi 23640, District Swabi, NWFP, Pakistan
M. H. Sayyad
Affiliation:
GIK Institute of Engineering Sciences and Technology, Topi 23640, District Swabi, NWFP, Pakistan
Kh. S. Karimov
Affiliation:
GIK Institute of Engineering Sciences and Technology, Topi 23640, District Swabi, NWFP, Pakistan Physical Technical Institute, Aini St. 299/1, Dushanbe 734063, Tajikistan
Z. M. Karieva
Affiliation:
State Technical University, Dushanbe 734000, Tajikistan
K. Y. Cheong
Affiliation:
Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia
A. F. Mohd Noor
Affiliation:
Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia
*
msaleem108@hotmail.com
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Abstract

In this study, Ag/OD-MO/Ag surface-type diode was fabricated by drop-casting orange dye and methyl orange blend thin film from 1.0 wt.% aqueous solution, under the effect of an electric field, on a glass substrate with preliminary deposited silver electrodes. Geometrical length and width of the semiconducting channel between metallic electrodes were equal to 40 μm and 21 mm, respectively. The dark I-V characteristics exhibited strong rectification behaviour though both electrodes were from the same metal. The average value of rectification ratio (RR) was 27 and it was found that RR varies with applied voltage in the range of 1–40. The dark I-V characteristics were simulated by modified Shockley equation and space-charge limited currents (SCLC) approach. Different diode parameters were calculated from current-voltage characteristics. The diode showed non-ideal I-V behaviour with a quality factor greater than unity. Energy band diagram is proposed for the Ag/OD-MO/Ag surface-type diode.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 50 , Issue 3 , June 2010 , 30401
Copyright
© EDP Sciences, 2010

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References

Kılıçoğlu, T., Aydın, M.E., Ocak, Y.S., Physica B 388, 244 (2007) CrossRef
Krishnan, S., Stefanakos, E., Bhansali, S., Thin Solid Films 516, 2244 (2008) CrossRef
Jarosz, G., Thin Solid Films 516, 8984 (2008) CrossRef
Sharma, G.D., Saxena, D., Roy, M.S., Thin Solid Films 467, 220 (2004) CrossRef
Agostinelli, T., Caironi, M., Natali, D., Sampietro, M., Biagioni, P., Finazzi, M., Duó, L., J. Appl. Phys. 101, 114504 (2007) CrossRef
Mauthner, G., Landfester, K., Köck, A., Brückl, H., Kast, M., Stepper, C., List, E.J.W., Org. Electron. 9, 164 (2008) CrossRef
Saleem, M., Sayyad, M.H., Karimov, K.S., Ahmad, Z., Shah, M., Yaseen, M., Khokhar, I., Ali, M., J. Optoelectron. Adv. Mater. 10, 1468 (2008)
Ahmad, Z., Sayyad, M.H., Saleem, M., Karimov, K.S., Shah, M., Physica E 41, 18 (2008) CrossRef
Z. Ahmad, M.H. Sayyad, in Proc. World Academy of Science, Engineering and Technology, Germany, 2008 (WASET, Heidelberg), Vol. 43, p. 571, http://www.waset.org/journals/waset/v43.php
Loutfy, R.C., Sharp, J.H., Hsiao, C.K., Ho, R., J. Appl. Phys. 52, 5218 (1981) CrossRef
Sahingoz, R., Soykan, C., Yakuphanoglu, F., Voigt, M., Çetin, H., Opt. Mater. 28, 962 (2006) CrossRef
Gullu, O., Aydoğan, S., Turut, A., Microelectron. Eng. 85, 1647 (2008) CrossRef
Yakuphanoglu, F., Physica B 400, 208 (2007) CrossRef
Karimov, K.S., Akhmed, M.M., Moiz, S.A., Babadzhanov, P., Marupov, R., Turaeva, M.A., Eurasian Chem. Technol. J. 5, 109 (2003) CrossRef
Moiz, S.A., Karimov, K.S., Gohar, N.D., Eurasian Chem. Technol. J. 6, 201 (2004)
Moiz, S.A., Ahmed, M.M., Karimov, K.S., ETRI J. 27, 319 (2005) CrossRef
Moiz, S.A., Ahmed, M.M., Karimov, K.S., Jpn J. Appl. Phys. 44, 1199 (2005) CrossRef
Begum, N.S., Ahmed, H.M.F., Gunashekar, K.R., Bull. Mater. Sci. 31, 747 (2008) CrossRef
Zainal, Z., Lee, C.Y., Kassim, A., Hussein, M.Z., Yusof, N.A., Acta Chim. Slov. 54, 166 (2007)
D.A. Neamen, Semiconductor Physics and Devices (Richard D. Irwin, Inc., New York, 1999)
Fang, Y., Chen, S.A., Chu, M.L., Synth. Met. 52, 261 (1992) CrossRef
Pang, M.Y., Li, W.S., Wong, K.H., Surya, C., J. Non-Crystal. Solids 354, 4234 (2008) CrossRef
Saxena, V., Santhanam, K.S.V., Curr. Appl. Phys. 3, 227 (2003) CrossRef
A.F. Gorodetsky, A.F. Kravchenko, Semiconductor Devices (Visshaya Shkola, Moscow, 1986)
M.A. Lampert, Current Injection in Solids (Academic Press, New York, 1970), p. 21
Schmechel, R., Seggern, H., Phys. Stat. Sol. (a) 201, 1215 (2004) CrossRef
M.A. Omar, Elementary Solid State Physics: Principles and Applications (3rd Indian Reprint, Delhi, India, 2002)
Tada, H., Kawaguchi, T., Koma, A., Appl. Phys. Lett. 61, 2021 (1992) CrossRef
F. Gutman, L.E. Lyons, Organic semiconductors, Part A (Robert E. Krieger Publishing Co., Malabar, Florida, 1980)
F. Gutman, H. Keyzer, L.E. Lyons, R.B. Somoano, Organic semiconductors, Part B (Robert E. Krieger Publishing Co., Malabar, Florida, 1983)