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Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures

Published online by Cambridge University Press:  15 September 1999

K. Kassmi ,
R. Maimouni  and
G. Sarrabayrouse
K. Kassmi*
Affiliation:
Laboratoire d'Électronique Appliquée et d'Automatique (LEAA), Université Mohamed Ier, Faculté des Sciences, département de Physique, Oujda, Morocoo
R. Maimouni
Affiliation:
Laboratoire d'Électronique Appliquée et d'Automatique (LEAA), Université Mohamed Ier, Faculté des Sciences, département de Physique, Oujda, Morocoo
G. Sarrabayrouse
Affiliation:
Laboratoire d'Analyse et d'Architecture des systèmes (LAAS-CNRS), 7 avenue colonel Roche, 31077 Toulouse, France
*
kassmi@sciences.univ-oujda.ac.ma
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Abstract

In this paper, we analyse the ionizing irradiation influence on the characteristic current-voltage (V < 0 and V > 0) of the metal/ultra-thin oxide/semiconductor structures where the oxide thickness varies from 40 to 125 Å. The results obtained show that this influence is significant on the current corresponding to the carrier injection by the semiconductor (V > 0). When the thickness of oxide is higher than 100 Å, the radiation creates a positive charge in the oxide and decreases the conduction parameters (K1 and K2). For oxide thicknesses lower than 100 Å, the radiation does not create any charge in the oxide but improves the conduction parameters. This is attributed to the beneficial effect of the radiation on the defects characterizing an ultra-thin oxide layer.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 8 , Issue 2 , September 1999 , pp. 171 - 178
Copyright
© EDP Sciences, 1999

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