Skip to main content Accessibility help
×
Home

In-plane strain states of standard and flip-chip GaN epilayers

  • Z. Y. Zuo (a1), D. Liu (a1), R. J. Wang (a1), S. B. Qin (a1), H. Liu (a1) and X. G. Xu (a1)...

Abstract

We report here a comparative study of the in-plane strain states of standard GaN epilayer grown on sapphire (001) and flip-chip GaN epilayer bonded on Si (111) wafer by means of X-Ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy. It is confirmed that the in-plane tensile strains can be largely reduced after the flip-chip process. The reduction of the biaxial strains determined by XRD, Raman, and PL analysis is found to be consistent.

Copyright

Corresponding author

References

Hide All
[1] Wierer, J.J., Steigerwald, D.A., Krames, M.R., O'Shea, J.J., Ludowise, M.J., Christenson, G., Shen, Y.C., Lowery, C., Martin, P.S., SubRamanya, S., Gotz, W., Gardner, N.F., Kern, R.S., Stockman, S.A., Appl. Phys. Lett. 78, 3379 (2001)
[2] Steigerwald, D.A., Bhat, J.C., Collins, D., Fletcher, R.M., Holcomb, M.O., Ludowise, M.J., Martine, P.S., Rudaz, S.L., IEEE J. Sel. Top. Quantum Electron. 8, 310 (2002)
[3] Hibbard, D.L., Jung, S.P., Wang, C., Ullery, D., Zhao, Y.S., So, W., Liu, H., Lee, H.P., Appl. Phys. Lett. 83, 311 (2003)
[4] Tadamoto, K., Okagawa, H., Ohuchi, Y., Tsunekawa, T., Imada, Y., Kato, M., Taguchi, T., Jpn J. Appl. Phys. Part 2 40, L583 (2001)
[5] Rode, D.L., Gaskill, D.K., Appl. Phys. Lett. 66, 1972 (1995)
[6] Matloubian, M., Gershenzon, M., J. Electron. Mater. 14, 633 (1985)
[7] Hiramatsu, K., Detchprohm, T., Akasaki, I., Jpn J. Appl. Phys. 32, 1528 (1993)
[8] Shan, W., Hauenstein, R.J., Fischer, A.J., Song, J.J., Perry, W.G., Bremser, M.D., Davis, R.F., Goldenberg, B., Phys. Rev. B 54, 13460 (1996)
[9] Kisielowski, C., Kruger, J., Ruvimov, S., Suski, T., Ager III, J.W., Jones, E., Liliental-Weber, Z., Rubin, M., Weber, E.R., Phys. Rev. B 54, 17745 (1996)
[10] Savastenco, V.A., Sheleg, A.U., Phys. Stat. Sol. A 48, K135 (1978)
[11] Kim, K., Lambrecht, R., Land, B.S., Phys. Rev. B 50, 1502 (1994)
[12] Azuhata, T., Sota, T., Suzuki, K., J. Phys.: Condens. Matter 8, 3111 (1996)
[13] Polian, A., Grimsdich, M., Grzegory, I., J. Appl. Phys. 79, 3343 (1996)
[14] M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J.M. Baranowski, private communication
[15] Kisielowski, C., Semicond. Semimet. 57, 275 (1997)
[16] Weber, L., Sohn, Z., Newman, H., Washburn, J., J. Vac. Sci. Technol. B 13, 1578 (1995)
[17] Zembutsu, S., Sasaki, T., Appl. Phys. Lett. 48, 870 (1975)
[18] Detchprohm, T., Hiramatsu, K., Itoh, K., Akasaki, I., Jpn J. Appl. Phys. 31, L1454 (1992)
[19] Demangeot, F., Frandon, J., Renucci, M.A., Briot, O., Gil, B., Aulombard, R.L., Solid State Commun. 100, 207 (1996)
[20] Wagner, J.M., Bechstedt, F., Appl. Phys. Lett. 77, 346 (2000)
[21] Davydov, V.Y., Averkiev, N.S., Goncharuk, I.N., Nelson, D.K., Nikitina, I.P., Polkovnikov, A.S., Smirnov, A.N., Jacobson, M.A., J. Appl. Phys. 82, 5097 (1997)
[22] Harima, H., J. Phys.: Condens. Matter 14, R967 (2002)
[23] Gil, B., Briot, O., Aulombard, R.L., Phys. Rev. B 52, R17028 (1995)
[24] Tchounkeu, M., Briot, O., Gil, B., Alexis, J.P., Aulombard, R.L., J. Appl. Phys. 80, 5352 (1996)
[25] Gil, B., Hamdani, F., Morkoç, H., Phys. Rev. B 54, 7578 (1996)
[26] Li, W., Ni, W.X., Appl. Phys. Lett. 68, 2705 (1996)
[27] Gil, B., Semicond. Semimet. 57, 209 (1998)

In-plane strain states of standard and flip-chip GaN epilayers

  • Z. Y. Zuo (a1), D. Liu (a1), R. J. Wang (a1), S. B. Qin (a1), H. Liu (a1) and X. G. Xu (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed