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In-plane strain states of standard and flip-chip GaN epilayers

  • Z. Y. Zuo (a1), D. Liu (a1), R. J. Wang (a1), S. B. Qin (a1), H. Liu (a1) and X. G. Xu (a1)...


We report here a comparative study of the in-plane strain states of standard GaN epilayer grown on sapphire (001) and flip-chip GaN epilayer bonded on Si (111) wafer by means of X-Ray diffraction (XRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy. It is confirmed that the in-plane tensile strains can be largely reduced after the flip-chip process. The reduction of the biaxial strains determined by XRD, Raman, and PL analysis is found to be consistent.


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In-plane strain states of standard and flip-chip GaN epilayers

  • Z. Y. Zuo (a1), D. Liu (a1), R. J. Wang (a1), S. B. Qin (a1), H. Liu (a1) and X. G. Xu (a1)...


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