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Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures

Published online by Cambridge University Press:  15 July 2004

O. Martínez ,
C. Pelosi ,
G. Attolini ,
E. Martín ,
L. F. Sanz  and
J. Jiménez
O. Martínez*
Affiliation:
Departamento de Física de la Materia Condensada, Escuela Técnica Superior de Ingenieros Industriales, Paseo del Cauce s/n, 47011 Valladolid, Spain
C. Pelosi
Affiliation:
IMEM-CNR Institute, Parco Area Delle Scienze, 37/A Fontanini 43010 Parma, Italy
G. Attolini
Affiliation:
IMEM-CNR Institute, Parco Area Delle Scienze, 37/A Fontanini 43010 Parma, Italy
E. Martín
Affiliation:
Departamento de Física de la Materia Condensada, Escuela Técnica Superior de Ingenieros Industriales, Paseo del Cauce s/n, 47011 Valladolid, Spain
L. F. Sanz
Affiliation:
Departamento de Física de la Materia Condensada, Escuela Técnica Superior de Ingenieros Industriales, Paseo del Cauce s/n, 47011 Valladolid, Spain
J. Jiménez
Affiliation:
Departamento de Física de la Materia Condensada, Escuela Técnica Superior de Ingenieros Industriales, Paseo del Cauce s/n, 47011 Valladolid, Spain
*
oscar@fmc.uva.es
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Abstract

GaInP layers were grown on GaAs substrates by MOVPE at low pressure in the temperature range between 525 and 600 °C. A detailed analysis of the optical properties of these samples was performed by means of Photoluminescence, Cathodoluminescence and microRaman spectroscopies, aiming to understand the contributions of composition fluctuations, strain, Cu-Pt type ordering, etc., to the properties of the layers. The composition gradients due to the horizontal flow reactor were specifically evaluated by Photoluminescence mapping. The luminescence parameters were analysed in terms of composition, order and strain by Cathodoluminescence imaging. On the other hand, ordering was observed to depend on the growth rate.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 333 - 336
Copyright
© EDP Sciences, 2004

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