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Indium oxide violet photodiodes

Published online by Cambridge University Press:  06 July 2006

L.-C. Chen
L.-C. Chen*
Affiliation:
Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China
*
ocean@ntut.edu.tw
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Abstract

Indium oxide (In2O3) violet photodiodes were fabricated. The In2O3 layers were from oxidation of InN deposited by magnetron reactive sputtering. It was found the photocurrent approximately 5.06 × 10−4 A at a bias of 2 V and a photocurrent to dark current contrast ratio higher than around two orders of magnitude. The reverse leakage current prior to breakdown is around 10−5 A. The photodiodes exhibited a narrow responsive region at wavelength from 400 nm to 440 nm. The values of responsivity and quantum efficiency (QE) at 420 nm at biases of 2 V were 0.1985 A/W and 58.62%, respectively.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 35 , Issue 1 , July 2006 , pp. 13 - 15
Copyright
© EDP Sciences, 2006

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