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A high magnetic field sensor based on magnetic tunnel junctions

Published online by Cambridge University Press:  25 June 2004

M. Hehn ,
G. Malinowski ,
M. Sajieddine ,
E. Jouguelet  and
A. Schuhl
M. Hehn*
Affiliation:
Laboratoire de Physique des Matériaux, UMR CNRS 7556, BP 239, 54506 Vandœuvre-lès-Nancy Cedex, France
G. Malinowski
Affiliation:
Laboratoire de Physique des Matériaux, UMR CNRS 7556, BP 239, 54506 Vandœuvre-lès-Nancy Cedex, France
M. Sajieddine
Affiliation:
Laboratoire de Physique des Matériaux, BP 523, 23000 Béni-Mellal, Morocco
E. Jouguelet
Affiliation:
Laboratoire de Physique des Matériaux, UMR CNRS 7556, BP 239, 54506 Vandœuvre-lès-Nancy Cedex, France
A. Schuhl
Affiliation:
Laboratoire de Physique des Matériaux, UMR CNRS 7556, BP 239, 54506 Vandœuvre-lès-Nancy Cedex, France
*
hehn@lpm.u-nancy.fr
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Abstract

We used an in-plane magnetized electrode and a perpendicular to film plane magnetized multilayer electrode in a magnetic tunnel junction to generate the active part of a magnetic field sensor able to measure large fields. When the applied field is normal to the junction surface, the magnetization of the multilayer electrode is fixed while the moment of the in-plane magnetized electrode rotates towards the applied field. This generates a linear variation of tunnel junction resistance with the applied field. The use of tunnel junctions with all their known advantages makes this structure attractive for measuring large magnetic fields, of up to several kG.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 28 , Issue 1 , October 2004 , pp. 79 - 81
Copyright
© EDP Sciences, 2004

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References

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