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High carrier injection for all-silicon laser

Published online by Cambridge University Press:  23 April 2012

H. Toufik ,
W. Tazibt ,
N. Toufik ,
M. El Tahchi ,
F. Pélanchon  and
P. Mialhe
H. Toufik
Affiliation:
PROMES-ELIAUS, Laboratoire Euro-Méditerranéen Sciences et Technologies, Université de Perpignan Via Domitia, 52 avenue Paul Alduy, 66860 Perpignan Cedex, France
W. Tazibt
Affiliation:
PROMES-ELIAUS, Laboratoire Euro-Méditerranéen Sciences et Technologies, Université de Perpignan Via Domitia, 52 avenue Paul Alduy, 66860 Perpignan Cedex, France Department of Physics, University A. Mira, Béjaïa, Algeria
N. Toufik
Affiliation:
PROMES-ELIAUS, Laboratoire Euro-Méditerranéen Sciences et Technologies, Université de Perpignan Via Domitia, 52 avenue Paul Alduy, 66860 Perpignan Cedex, France
M. El Tahchi
Affiliation:
PROMES-ELIAUS, Laboratoire Euro-Méditerranéen Sciences et Technologies, Université de Perpignan Via Domitia, 52 avenue Paul Alduy, 66860 Perpignan Cedex, France
F. Pélanchon
Affiliation:
PROMES-ELIAUS, Laboratoire Euro-Méditerranéen Sciences et Technologies, Université de Perpignan Via Domitia, 52 avenue Paul Alduy, 66860 Perpignan Cedex, France
P. Mialhe*
Affiliation:
PROMES-ELIAUS, Laboratoire Euro-Méditerranéen Sciences et Technologies, Université de Perpignan Via Domitia, 52 avenue Paul Alduy, 66860 Perpignan Cedex, France
*
amialhe@univ-perp.fr

Abstract

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This work provides a novel approach for enhanced radiative transitions in silicon microelectronics devices. A process based on hot carrier injection is monitored for the creation of a low dimensions defect layer near the emitter-base interface of bipolar transistors. New energy levels are induced together with a potential barrier. Carrier confinement is correlated with the potential barrier height. The increase of light emission is related to high injection effects in the junction. Results present an advance toward Si-based optoelectronic devices.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 58 , Issue 1 , April 2012 , 10103
Copyright
© The author(s) 2012

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