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Electrical properties of the shallow thermal donors (TDs) in n-type CZ-Si diodes by the electron irradiation were investigated. After the electron irradiation, carrier concentration was decreased. From deep level transient spectroscopy (DLTS) measurements, some peaks related to TDs and vacancy-oxygen complexes were observed for the irradiated samples. The peak related to V-O and/or A-center at E C -0.18 eV increased with the electron fluence. To compare that, the level of E C -0.09 eV related to TDs was independent of electron fluence. In addition to that, reverse current of the diodes was increased with increasing irradiated electron fluence.