Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-25T16:41:04.241Z Has data issue: false hasContentIssue false
  • English
  • Français

DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs

Published online by Cambridge University Press:  15 July 2004

M. Kaniewska ,
J. Sadowski  and
M. Guziewicz
M. Kaniewska*
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
J. Sadowski
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland Niels Bohr Institute, Universitetsparken 5, 2100 Copenhagen, Denmark
M. Guziewicz
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
*
kaniew@ite.waw.pl
Get access

Abstract

The thermal emission rate of dominant traps in molecular beam epitaxial n- and p-type AlGaAs subjected to Ar-ion beam etching has been studied by deep level transient spectroscopy. Emission signatures were determined and compared with results obtained by other authors for irradiation induced and grown-in defects in GaAs and AlGaAs. The most significant result of this study is the observation that the process-induced defects in n- as well as p-type AlGaAs exhibit emission signatures, which are characteristic of native defects found in GaAs. The effect is discussed in terms of a compensation effect and related band bending.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 213 - 217
Copyright
© EDP Sciences, 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Pearton, S. J., Iannuzzi, M. P., Reynolds Jr, C. L.., L. Peticolas, Appl. Phys. Lett. 52, 395 (1988) CrossRef
Pearton, S. J., Hobson, W. S., Von Neida, A. E, Haegel, N. M., Joness, K. S., Morris, N., Sealy, B. J., J. Appl. Phys. 67, 2396 (1990) CrossRef
Pearton, S. J., Abernathy, C. R., Ren, F., Fullowan, T. R., Semicond. Sci. Technol. 6, 1042 (1991) CrossRef
Kaniewska, M., Bozek, J., Cryst. Res. Technol. 38, 351 (2003) CrossRef
Szatkowski, J., Placzek-Popko, E., Sieranski, K., Hansen, O. P., Johansen, A., Soerensen, C., Physica B 273, 718 (1999) CrossRef
Ishii, H., Shinagawa, T., Tanaka, S., Okumura, T., J. Cryst. Growth 210, 242 (2000) CrossRef
Szatkowski, J., Placzek-Popko, E., Hajdusianek, A., Johansen, A., Soerensen, C., Physica B 308-310, 769 (2001) CrossRef
Yu, J.-Z., Masui, N., Yuba, Y., Hara, T., Hamagaki, M., Aoyagi, Y., Gamo, K., Namaba, S., Jap. J. Appl. Phys. 28, 2391 (1989) CrossRef
Stievenard, D., Bourgoin, J. C., J. Appl. Phys. 59, 743 (1986) CrossRef
Pearton, S. J., Emerson, A. B., Chakrabarti, U. K., Lane, E., Jones, K. S., Short, K. T., White, A. E., Fullowan, T. R., J. Appl. Phys. 66, 3839 (1989) CrossRef
Lootens, D., Van Daele, P., Demeester, P., Clauws, P., J. Appl. Phys. 70, 221 (1991) CrossRef
Kaniewska, M., Ratajczak, J., Phys. Stat. Sol. A 195, 44 (2003) CrossRef
Ihara, A., Ohno, Y., Takeda, S., Nagao, S., Diffily, D., Satoh, Y., Shimoyama, K., Hosoi, N., Physica B 273–274, 1050 (1999) CrossRef
Lefevre, H., Schultz, M., Appl. Phys. 12, 45 (1977) CrossRef
Saxena, A. K., Phys. Stat. Sol. A 183, 281 (2001) 3.0.CO;2-V>CrossRef
Yamanaka, K., Naritsuka, S., Kanamoto, K., Mihara, M., Ishii, M., J. Appl. Phys. 61, 5062 (1987) CrossRef
McAfee, S. R., Tsang, W. T., Lang, D. V., J. Appl. Phys. 52, 6165 (1981) CrossRef
Akimoto, K., Kamada, M., Taira, K., Arai, M., Watanabe, N., J. Appl. Phys. 59, 2833 (1986) CrossRef
Hashizume, T., Hasegawa, H., Ohno, H., J. Appl. Phys. 68, 3394 (1990) CrossRef
Matsumoto, T., Bhattacharya, P. K., Ludowise, M. J., Appl. Phys. Lett. 41, 662 (1982) CrossRef
Day, D. S., Oberster, J. D., Drummond, T. J., Morkoc, H., Cho, A. Y., Streetman, B. G., J. Electron. Mater. 10, 445 (1981) CrossRef
Hakata, T., Ohyama, H., Kuroda, S., Simeon, E., Claeys, C., Kudou, T., Kobayashi, K., Nakabayashi, M., Yoneoka, M., Takami, Y., Sunaga, H., Miyahara, K., Physica B 273–274, 1034 (1999); private information on emission data of the trap at E $_\text{C}-0.55$ eV. CrossRef
Yu, J.-Z., Masui, N., Yuba, Y., Hara, T., Hamagaki, M., Aoyagi, Y., Gamo, K., Namba, S., Jap. J. Appl. Phys. 28, 2391 (1989) CrossRef
D. V. Lang, L. C. Kimerling, Lattice Defects in Semiconductors (Institute of Physics, London, 1974), p. 581
Lagowski, J., Lin, D. G., T. -P. Chen, M. Skowronski, H. C. Gatos, Appl. Phys. Lett. 47, 929 (1985) CrossRef
Pearton, S. J., Chakrabarti, U. K., Baiocchi, F. A., Appl. Phys. Lett. 55, 1633 (1989) CrossRef
Giri, P. K., Mohapatra, Y. N., Semicond. Sci. Technol. 15, 985 (2000) CrossRef