We have developed a model of calculation of the induced current due to an electron beam. The expression for the electron beam induced current (EBIC) with an extended generation profile is obtained via the resolution of a steady state continuity equation by the Green function method, satisfying appropriated boundary conditions to the physical model. The generation profile takes into account the lateral diffusion, the effect of defects, dislocations and recombination surfaces besides the number of absorbed electrons and that of diffuse electrons as a function of the depth. In the case of a Schottky diode Au/GaAs obtained by metalorganic vapour phase epitaxy (MOVPE) method, the theoretical induced current profile is compared to the experimental one and to theoretical profiles whose analytical expressions are given by van Roosbroeck and Bresse. The minority carriers diffusion length Ln = 2 µm and the optical self-absorption coefficient a = 0.034 µm−1 can be deduced from the experimental current profile, measured by scanning electron microscopy. The theoretical curve, obtained from the proposed model is in a good agreement with the experimental one for surface recombination velocity 106 cm s−1 except for distances far from the depletion layer (x0 > 2.3 µm) where the photocurrent produced by the multiple process of the reabsorbed recombination radiation is preponderant. Our results are in agreement with those obtained by other experimental techniques on the same samples.