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Determination of the conduction mechanism and extraction of diode parameters of Au/PANI-TiO2/Al Schottky diode

Published online by Cambridge University Press:  30 April 2013

Hojjat Amrollahi Bioki
Hojjat Amrollahi Bioki*
Affiliation:
Department of Physics, Faculty of Science, Yazd University, P.O. Box 89195-741, Yazd, Iran
*
ae-mail: hojjat2222@yahoo.com
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Abstract

Schottky barrier diodes based on a composite of polyaniline with titanium oxide (TiO2) were fabricated using aluminum as a Schottky contact and gold as an ohmic contact. The observed current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. The current-voltage characteristics were studied to explain the rectification generation of the diode. The diode shows non-ideal I-V behavior with an ideality factor greater than unity. The conduction mechanism was determined and a Schottky-type conduction process was defined. The diode parameters such as saturation current density and ideality factor were found to be 9.28 x 10−4 A/cm2 and 6.33, respectively.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 62 , Issue 2 , May 2013 , 20201
Copyright
© EDP Sciences, 2013

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References

Gutman, F., Lyons, L.E., Organic Semiconductors (Wiley, New York, 1967)Google Scholar
Assadi, A., Svensson, C., Willander, M., Inganas, O., J. Appl. Phys. 72, 2900 (1992)CrossRef
Yakuphanoglu, F., Şenkal, B. Filiz, Synth. Met. 159, 311 (2009)CrossRef
Saxena, V., Malhotra, B.D., Curr. Appl. Phys. 3, 293 (2003)CrossRef
Sahingoz, R., Soykan, C., Yakuphanoglu, F., Voigt, M., Cetin, H., Opt. Materials 28, 962 (2006)CrossRef
Karataş, S., Tűrűt, A., Vacuum 74, 45 (2004)CrossRef
Aziz, M.S., Solid-State Electron. 52, 1145 (2008)CrossRef
Lee, J., Hwang, D.K., Park, C.H., Kim, S.S., Im, S., Thin Solid Films 451–452, 12 (2004)CrossRef
Bhadra, S., Khastgir, D., Singha, N.K., Lee, J.H., Prog. Polym. Sci. 34, 783 (2009)CrossRef
Choudhari, H.K., Kilkar, D., J. Appl. Polym. Sci. 61, 561 (1996)3.0.CO;2-2>CrossRef
Camaioni, N., Casalbore-Miceli, G., Beggiato, G., Geri, A., Synth. Met. 102, 869 (1999)CrossRef
Margolis, J.M., Conducting Polymer and Plastics (Chapman & Hall, New York, 1989)CrossRefGoogle Scholar
Wong, P.T.C., Chambers, B., Anderson, A.P., Wright, P.V., Electr. Lett. 28, 1651 (1992)CrossRef
Logothetidis, S., Laskarakis, A., Eur. Phys. J. Appl. Phys. 46 (2009)
Alet, P.J., Palacin, S., Roca, P. Cabarrocas, i, Kalache, B., Firon, M., De Bettignies, R., Eur. Phys. J. Appl. Phys. 36, 231 (2006)CrossRef
Sun, L., Liu, X.Y., Hou, D.Q., Han, R.Q., Electr. Lett. 40, 511 (2004)CrossRef
Nafdey, R.A., Kelkar, D.S., Thin Solid Films 477, 95 (2005)CrossRef
Angappane, S., Rajeev Kini, N., Natarajan, T.S., Rangarajan, G., Wessling, B., Thin Solid Films 417, 202 (2002)CrossRef
Ramamurthy, P.C., Harrell, W.R., Gregory, R.V., Electrochem. Solid-State Lett. 6, G113 (2003)CrossRef
El-Nahass, M., Abd-El-Rahman, K., Darwish, A., Eur. Phys. J. Appl. Phys. 48 (2009)
Zubair, A., Muhammad, H.S., Physica E 41, 631 (2009)
Sun, L., Crooks, R.M., Chechik, V., Chem. Commun. 4, 359 (2001)CrossRef
Gupta, R.K., Singh, R.A., J. Polym. Res. 11, 269 (2005)CrossRef
Motaweh, H.A., Abdel-Malik, T.G., in Proc. SPIE, Organic Photovoltaics IX, Vol. 7052 (The International Society for Optical Engineering, 2008), pp. 705212.1–705212.7Google Scholar
Sun, Y., Xia, Y., Science 298, 2176 (2002)CrossRef
Nateghi, M.R., Borhani Zarandi, M., Mosslemin, M.H., Iranian Polym. J. 18, 633 (2009)
Fall, C.J., Binggeli, N., Baldereschi, A., Phys. Rev. B 58, R7544 (1998)CrossRef
Chen, W.C., Wen, T.C., Gopalan, A., Mat. Sci. Eng. B 116, 125 (2005)CrossRef
Saxena, V., Santhanam, K., Curr. Appl. Phys. 3, 227 (2003)CrossRef
Sze, S.M., Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981)Google Scholar
Chen, W.C., Wen, T.C., Gopalan, A., J. Electrochem. Soc. 151, F242 (2004)CrossRef
Schmitsdorf, R., Kampen, T., Monch, W., J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. 15, 1221 (1997)CrossRef
Mtangi, W., Auret, F.D., Nyamhere, C., Janse van Rensburg, P.J., Diale, M., Chawanda, A., Phys. B: Condens. Matter. 404, 1092 (2009)CrossRef
Campos, M., Bulhoes, L.O.S., Lindino, C.A., Sens. Actuat. A Phys. 87, 67 (2000)CrossRef