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The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector multilayer thin film at wavelength of 1064 nm

Published online by Cambridge University Press:  13 August 2014

Xiao Li ,
Baohe Li  and
Jianda Shao
Xiao Li*
Affiliation:
School of Science, Beijing Technology and Business University, Beijing 100048, P.R. China
Baohe Li
Affiliation:
School of Science, Beijing Technology and Business University, Beijing 100048, P.R. China
Jianda Shao
Affiliation:
Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P.R. China
*
ae-mail: lixiaoustc@163.com
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Abstract

The characteristic parameters of initiating defects in HfO2/SiO2 high-reflector film at wavelength of 1064 nm are investigated through the combined application of laser-conditioning process and the multispot damage threshold test. The laser damage tests before and after laser-conditioning are carried out within three different spot diameters. The damage threshold and the density are considered to characterize the initiating defects which are shown to be susceptible to laser damage. These characteristic parameters are obtained through fitting the damage data with the spot size effect. The influence of laser-conditioning effect on the initiating defects is analyzed. The initiating defects are specified by a Gaussian distribution after laser-conditioning. It is discussed the essential roles of the initiating defects to the damage threshold of the film. The investigation on characteristic parameters of initiating defects has potential to be applied in the mechanisms of laser induced damage and laser-conditioning, as well as in the direction the preparation of the films.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 67 , Issue 3 , August 2014 , 30301
Copyright
© EDP Sciences, 2014

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