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Characteristic features of an ionization system with semiconducting cathode

Published online by Cambridge University Press:  15 June 1998

B. G. Salamov ,
Ş. Altındal ,
M. Özer ,
K. Çolakoğlu  and
E. Bulur
B. G. Salamov*
Affiliation:
Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Teknikokullar, Ankara, Turkey
Ş. Altındal
Affiliation:
Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Teknikokullar, Ankara, Turkey
M. Özer
Affiliation:
Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Teknikokullar, Ankara, Turkey
K. Çolakoğlu
Affiliation:
Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Teknikokullar, Ankara, Turkey
E. Bulur
Affiliation:
Physics Department, Middle East Technical University, 06531 Ankara, Turkey
*
bala@quark.fef.gazi.edu.tr
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Abstract

The characteristic features of a dc discharge generated between parallel plate electrodes and especially the discharge stabilization by the GaAs semiconducting cathode in such a system are studied. The cathode was irradiated on the back-side with IR light in a particular wavelength range that was used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. The current-voltage and radiation-voltage characteristics of the gas discharge cell with a semiconducting cathode were obtained experimentally. An investigation of the effect of the voltage amplitude on the dynamics of transient processes in the plane semiconductor-discharge gap structure was made for explanation of the light intensity and current decay. Expressions are obtained for the photoelectric gain.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 2 , Issue 3 , June 1998 , pp. 267 - 273
Copyright
© EDP Sciences, 1998

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