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Calculation of boron segregation at the Si(100)/SiO2 interface

Published online by Cambridge University Press:  15 July 2004

M. Furuhashi ,
T. Hirose ,
H. Tsuji ,
M. Tachi  and
K. Taniguchi
M. Furuhashi*
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
T. Hirose
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
H. Tsuji
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
M. Tachi
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
K. Taniguchi
Affiliation:
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
*
furuhashi@eie.eng.osaka-u.ac.jp
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Abstract


The stability of B atom near the Si(100)/SiO2 interface during annealing is studied by using ab initio calculation to investigate the atomic scale mechanism of B segregation at the Si(100)/SiO2 interface. Contrary to the experimental observations showing that B atoms segregate into SiO2, B atoms are found to be stable in Si free of defects. But authors can rephrase differently this sentence. On the other hand, when an O vacancy exists in SiO2, the B atom is trapped by the O vacancy and becomes quite stable in SiO2.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 163 - 166
Copyright
© EDP Sciences, 2004

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