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Annealing ambient controlled deep defect formation in InP

Published online by Cambridge University Press:  15 July 2004

Y. W. Zhao ,
Z. Y. Dong ,
M. L. Duan ,
W. R. Sun ,
Y. P. Zeng ,
N. F. Sun  and
T. N. Sun
Y. W. Zhao*
Affiliation:
Materials Science Centre, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, P.R. China
Z. Y. Dong
Affiliation:
Materials Science Centre, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, P.R. China
M. L. Duan
Affiliation:
Materials Science Centre, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, P.R. China
W. R. Sun
Affiliation:
Materials Science Centre, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, P.R. China
Y. P. Zeng
Affiliation:
Materials Science Centre, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, P.R. China
N. F. Sun
Affiliation:
Hebei Semiconductor Research Institute, PO Box 179, Shijiazhuang 050051, Hebei, P.R. China
T. N. Sun
Affiliation:
Hebei Semiconductor Research Institute, PO Box 179, Shijiazhuang 050051, Hebei, P.R. China
*
zhaoyw@red.semi.ac.cn
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Abstract

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while InP annealed in iron phosphide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 167 - 169
Copyright
© EDP Sciences, 2004

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