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An approach to Raman spectroscopy and luminescence studies on binary and ternary II–VI semiconductors grown on mordenite matrices

Published online by Cambridge University Press:  21 August 2008

O. Martínez ,
M. Hernández-Vélez ,
H. Villavicencio ,
J. Tutor-Sanchez  and
J. Jiménez
O. Martínez*
Affiliation:
Departamento de Física de la Materia Condensada, E.T.S. Ingenieros Industriales, 47011 Valladolid, Spain
M. Hernández-Vélez
Affiliation:
Departamento de Física Aplicada, Facultad de Ciencias, C-XII, Universidad Autónoma, Cantoblanco, 28049 Madrid, Spain
H. Villavicencio
Affiliation:
Facultad de Ciencias, Universidad Pedagógica, C. Libertad, Marianao, La Habana, Cuba
J. Tutor-Sanchez
Affiliation:
Departamento de Física Aplicada, Facultad de Ciencias, C-XII, Universidad Autónoma, Cantoblanco, 28049 Madrid, Spain
J. Jiménez
Affiliation:
Departamento de Física de la Materia Condensada, E.T.S. Ingenieros Industriales, 47011 Valladolid, Spain
*
oscar@fmc.uva.es
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Abstract

Growth of the ternary semiconductor ZnxCd$_{1-x}$S in MOR type zeolite matrices is reported. Hydrothermal synthesis was used for growing such semiconductor compound and analogues by using Cd and Zn salts as well as Thiourea as precursor sources of Cd, Zn and S elements, respectively. Following synthesis routes previously reported, bulk CdS with a band gap of 2.26 eV was obtained to be used as a reference. The final products were mainly characterized by Raman and Photoluminescence spectroscopies. The study shows the formation of Zn diluted ZnCdS ternary alloy in the final products of the synthesis, particularly for those samples with a Zn(wt%)/Cd(wt%) ratio higher than 0.05, and also the formation of a ZnO phase with a band gap value around 3.3 eV for the sample with the highest Zn content.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 44 , Issue 2 , November 2008 , pp. 109 - 115
Copyright
© EDP Sciences, 2008

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