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Substrate-plasma interaction during amorphous silicon thin films growth by sputtering technique

Published online by Cambridge University Press:  12 June 2009

F. Khelfaoui  and
M. S. Aida
F. Khelfaoui
Affiliation:
Laboratoire de Couches Minces et Interfaces, Faculté des Sciences Exactes, Université de Constantine, 2500 Constantine, Algeria
M. S. Aida*
Affiliation:
Laboratoire de Couches Minces et Interfaces, Faculté des Sciences Exactes, Université de Constantine, 2500 Constantine, Algeria
*
aida_salah@yahoo.fr
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Abstract

The present paper deals with the investigation of Argon ions – substrate interactions during film growth and their influence on sputtered hydrogenated amorphous silicon (a-Si:H) thin films structural properties. These interactions are characterized by mean of the calculation of the energy distribution of Ar ions striking the substrate and their striking force measurement in the case of Rf diode sputtering. The influence of the Ar ions bombardment on structural and physical properties of amorphous silicon thin properties is discussed. The ion bombardment affects the film growth processes and consequently, it causes films densification and evolution of film microstructure from amorphous state at low power towards a microcrystalline material with increasing the Rf power.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 47 , Issue 3 , September 2009 , 31001
Copyright
© EDP Sciences, 2009

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