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Spectroscopic investigations on tetravalent doped LiCoO2 thin film cathodes

Published online by Cambridge University Press:  17 September 2009

M. C. Rao*
Affiliation:
Department of Physics, Andhra Loyola College, Vijayawada 520 008, India
O. M. Hussain
Affiliation:
Thin Film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati 517 502, India
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Abstract

Titanium-doped LiCoO2 thin films were grown by pulsed laser deposition technique on silicon substrates. Structure, AFM, FTIR, Raman and Optical properties were studied with respect to their deposition parameters i.e. substrate temperature $(T_{s})$ and oxygen partial pressure $(p_{{\rm O}_{2}})$ in the deposition chamber. The films deposited in $p_{{\rm O}_{2}}= 100$ m Torr showed good crystallinity on silicon substrates maintained at $T_{s}= 700$ °C. It was found that such a film crystallizes in the layered α-NaFeO2 structure. The influence of titanium doping on particle size and morphologies has been clearly studied. FTIR spectra displayed the characteristic IR dominant bands at 246 and 550 cm−1 for titanium doped LiCoO2 thin films. The Raman peaks observed for the films at 594 cm−1 and 485 cm−1 are ascribed to Raman active modes A1g and Eg respectively. The influence of titanium doping on the physical properties has been systematically studied.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2009

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