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Synthesis and structure of the ternary nitride Li6WN4

Published online by Cambridge University Press:  01 March 2012

W. X. Yuan ,
J. W. Hu ,
Y. T. Song ,
W. J. Wang  and
Y. P. Xu
W. X. Yuan*
Affiliation:
Department of Chemistry, University of Science and Technology Beijing, Beijing 100083, China
J. W. Hu
Affiliation:
Department of Chemistry, University of Science and Technology Beijing, Beijing 100083, China
Y. T. Song
Affiliation:
Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Science, P.O. Box 603, Beijing 100080, China
W. J. Wang
Affiliation:
Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Science, P.O. Box 603, Beijing 100080, China
Y. P. Xu
Affiliation:
Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Science, P.O. Box 603, Beijing 100080, China
*
a)Author to whom correspondence should be addressed. Electronic mail: wxyuan@sas.ustb.edu.cn
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Abstract

The ternary nitridotungstate Li6WN4 has been synthesized via the solid state reaction of lithium subnitride, Li3N, with W under nitrogen. High quality X-ray powder diffraction data were collected for the crystal-structure determination. Li6WN4 crystallizes in the tetragonal system, space group P42∕nmc, with cell parameters a=6.6759(3) Å and c=4.9280(3) Å, Z=2. Preliminary thermal stability measurements of Li6WN4 show that it is sensitive to moisture, even at room temperature, and decomposes at high temperatures below 1000 °C under flowing nitrogen.

Keywords

nitrideschemical synthesiscrystal structurethermal analysis
Type
Technical Articles
Information
Powder Diffraction , Volume 20 , Issue 1 , March 2005 , pp. 18 - 21
Copyright
Copyright © Cambridge University Press 2005

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References

Aoki, M., Yamane, H., Shimada, M., Sarayama, S., and DiSalvo, F. J. (2000). “GaN single crystal growth using high-purity Na as a flux,” J. Cryst. Growth JCRGAE 242, 70–76.Google Scholar
Boultif, A., and Louer, D. (1991). “Indexing of powder diffraction patterns for low-symmetry lattices by the successive dichotomy method,” J. Appl. Crystallogr. JACGAR 24, 987–993.Google Scholar
Brown, I. D., and Altermatt, D. (1985) “Bond-valence parameters obtained from a systematic analysis of the inorganic crystal structure database,” Acta Crystallogr., Sect. B: Struct. Sci. ASBSDK 41, 244–247.Google Scholar
DiSalvo, F. J. (1990). “Solid-state chemistry: A rediscovered chemical frontier,” Science SCIEAS 247, 649–655.Google Scholar
Gregory, D. H. (1999). “Structural families in nitride chemistry,” J. Chem. Soc. Dalton Trans. JCDTBI , 259–270.CrossRefGoogle Scholar
Gudat, A., Haag, S., Kniep, R., and Rabenau, A. (1990). “Ternary lithium nitrides with elements chromium, molybdenum and tungsten,” Z. Naturforsch., B: Chem. Sci. ZNBSEN 45, 111–120.Google Scholar
Herle, P. S., Hegde, M. S., Vasanthacharya, N. Y., Gopalakrishnan, J., and Subbanna, G. N. (1994). “Synthesis, structure, and properties of LiWN2,” J. Solid State Chem. JSSCBI 112, 208–210.CrossRefGoogle Scholar
Kniep, R. (1997). “Ternary and quaternary metal nitrides: A new challenge for solid state chemistry,” Pure Appl. Chem. PACHAS 69, 185–191.CrossRefGoogle Scholar
Marchand, R., Tessier, F., and DiSalvo, F. J. (1999). “New routes to transition metal nitrides: preparation and characterization of new phases,” J. Mater. Chem. JMACEP 9, 297–304.CrossRefGoogle Scholar
Monemar, B. (1971). “Fundamental energy gap of GaN from photoluminescence excitation spectra,” Phys. Rev. B PLRBAQ 10, 676–681.Google Scholar
Niewa, R., and DiSalvo, F. J. (1998). “Recent developments in nitride chemistry,” Chem. Mater. CMATEX 10, 2733–2752.Google Scholar
Philips Electronics (2002). HIGHSCORE Version 1.0, Koninklijke Philips Electronics NV, Almeno, The Netherlands.Google Scholar
Porowski, S. (1996). “High pressure growth of GaN—new prospects for blue lasers,” J. Cryst. Growth JCRGAE 166, 583–589.CrossRefGoogle Scholar
Rodriguez-Carvajal, J. (2003). FULLPROP Version 2.45. Institut Laue-Langevin, Grenoble, France.Google Scholar
Song, Y. T., Wang, W. J., Yuan, W. X., and Chen, X. L. (2003). “Bulk GaN single crystals: growth conditions by flux method,” J. Cryst. Growth JCRGAE 247, 275–278.Google Scholar