Skip to main content Accessibility help
×
Home

Magnetic properties and crystal structure of Ga2−xFexO3

  • Hui Yan (a1) (a2), Yuanqi Huang (a1) (a2), Wei Cui (a1) (a2), Yusong Zhi (a1) (a2), Daoyou Guo (a1) (a2), Zhenping Wu (a1) (a2), Zhengwei Chen (a1) (a2) and Weihua Tang (a1) (a2)...

Abstract

Ga2−xFexO3 (GFO) bulks with x from 0.7 to 1.3 have been fabricated using the classic solid-state route. The structural, optical, and magnetic properties have been investigated systematically. X-ray diffraction spectra and FULLPROF profile fitting indicate that GFO bulks belong to the orthorhombic structure with the space group Pc21n. Phase separation appears at the Fe content of x = 1.3. The optical bandgap decreases almost linearly with the increase of iron content, which means that the bandgap of GFO bulks can be controlled by adjusting the Fe content in the samples. The magnetic property measurements suggest that GFO is ferromagnetic, and the magnetic properties are enhanced compared with other reported works, exhibiting the application in ferromagnetic semiconductors devices.

Copyright

Corresponding author

a)Author to whom correspondence should be addressed. Electronic mail: zhengweichen@bupt.edu.cn
b)Author to whom correspondence should be addressed. Electronic mail: whtang@bupt.edu.cn

References

Hide All
Abrahams, S. C., Reddy, J. M., and Bernstein, J. L. (1965). “Crystal structure of piezoelectric ferromagnetic gallium iron oxide,” J. Chem. Phys. 42, 39573968.
Arima, T., Higashiyama, D., Kaneko, Y., He, J. P., Goto, T., and Miyasaka, S. (2004). “Structural and magnetoelectric properties of Ga2−xFexO3, single crystals grown by a floating-zone method,” Phys. Rev. B 70, 064426.
Atanelov, J. and Mohn, P. (2015). “Electronic and magnetic properties of GaFeO3: ab initio calculations for varying Fe/Ga ratio, inner cationic site disorder, and epitaxial strain,” Phys. Rev. B 92, 104408.
Frankel, R. B., Blum, N. A., and Foner, S. (1965) “Ferrimagnetic structure of magnetoelectric Ga2−xFexO3,” Phys. Rev. Lett. 15, 958960.
Guo, D. Y., Wu, Z. P., Li, P. G., Wang, Q. J., Lei, M., Li, L. H., and Tang, W. H. (2015a). “Magnetic anisotropy and deep ultraviolet photoresponse characteristics in Ga2O3: Cr vermicular nanowire thin film nanostructure,” RSC Adv. 5, 1289412898.
Guo, D. Y., Wu, Z. P., An, Y. H., Li, P. G., Wang, P. C., Chu, X. L., Guo, X. L., Zhi, Y. S., Lei, M., Li, L. H., and Tang, W. H. (2015b). “Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications,” Appl. Phys. Lett. 106, 042105.
Guo, D. Y., Wu, Z. P., Zhang, L. J., Yang, T., Hu, Q. R., Lei, M., Li, P. G., Li, L. H., and Tang, W. H. (2015c). “Abnormal bipolar resistive switching behavior in a Pt/GaO1.3/Pt structure,” Appl. Phys. Lett. 97, 032104.
Guo, D. Y., An, Y. H., Cui, W., Zhi, Y. S., Zhao, X. L., Lei, M., Li, L. H., Li, P. G., Wu, Z. P., and Tang, W. H. (2016). “Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1–xFex)2O3 multilayer thin films,” Sci. Rep. 6, 25166.
Han, M. J., Ozaki, T., and Yu, J. (2007). “Magnetic ordering and exchange interactions in multiferroic GaFeO3,” Phys. Rev. B 75, 794802.
Han, T. C., Chen, T. Y., and Lee, Y. C. (2013). “Grain size effect on site-disorder and magnetic properties of multiferroic GaFeO3 nanoparticles,” Appl. Phys. Lett. 103, 232405.
Kalashnikova, A. M., Pisarev, R. V., Bezmaternykh, L. N., Temerov, V. L., Kirilyuk, A., and Rasing, T. (2005). “Optical and magneto-optical studies of a multiferroic GaFeO3, with a high Curie temperature,” Exp. Theor. Phys. 81, 452457.
Kaneko, K., Kakeya, I., Komori, S., and Fujita, S. (2013). “Band gap and function engineering for novel functional alloy semiconductors: bloomed as magnetic properties at room temperature with α-(GaFe)2O3,” J. Appl. Phys. 113, 233901.
Kotsikau, D. and Ivanovskaya, M. (2015). “Influence of structure of Fe2O3-In2O3 nanocomposites on the sensitivity of thin-film sensors on their base,” Mater. Chem. Phys. 160, 337344.
Levine, B. F., Nowlin, C. H., and Jones, R. V. (1968). “Magnetic properties of Ga2−xFexO3,” Phys. Rev. 174, 571582.
Li, H., Bao, H. Q., Song, B., Wang, W. J., and Chen, X. L. (2008). “Observation of ferromagnetic ordering in Ni-doped AlN polycrystalline powders,” Solid State Commun. 148, 406409.
Liu, Y., Wang, G., Wang, S., Yang, J., Chen, L., Qin, X., Song, B., Wang, B., and Chen, X. (2011). “Defect-induced magnetism in neutron irradiated 6 H-SiC single crystals,” Phys. Rev. Lett. 106, 087205.
Muhler, M., Schuetze, J., Wesemann, M., Rayment, T., Dent, A., and Schloegl, R. (1990). “Cheminform abstract: the nature of the iron oxide-based catalyst for dehydrogenation of ethylbenzene to styrene. Part 1. Solid-state chemistry and bulk characterization,” J. Catal. 126, 339360.
Mukhopadhyay, K., Mahapatra, A. S., and Chakrabarti, P. K. (2014). “Enhanced magneto-electric property of GaFeO3 in Ga(1−x)ZnxFeO3 (x = 0, 0.05, 0.10),” Physica B 448, 214218.
Naik, V. B. and Mahendiran, R. (2011). “Magnetic and magneto absorption studies in multiferroic nanoparticles,” IEEE Trans. Magn. 47, 37763779.
Remeika, J. P. (1960). “GaFeO3: a ferromagnetic-piezoelectric compound,” J. Appl. Phys. 31, S263S264.
Roulland, F., Lefevre, C., Thomasson, A., and Viart, N. (2013). “Study of Ga(2−x)FexO3 solid solution: optimisation of the ceramic processing,” J. Eur. Ceram. Soc. 33, 10291035.
Scott, J. F., Ross, F. M., Araujo, C., Scott, M. C., and Huffman, M. (1996). “Structure and device characteristics of SrBi2Ta2O9-based nonvolatile random-access memories,” MRS Bull. 21, 3339.
Sharma, K., Raghavendra, R. V., Gupta, A., Banerjee, A., and Awasthi, A. M. (2013). “Magnetic and 57Fe Mössbauer study of magneto-electric GaFeO3 prepared by the sol-gel route,” J. Phys. Condens. Matter 25, 076002.
Singh, S., Dey, P., Roy, J., and Mandal, S. (2014). “Enhancement of dielectric constant in transition metal doped ZnO nanocrystals,” Appl. Phys. Lett. 105, 092903.
Song, B., Bao, H., Li, H., Lei, M., Peng, T., Jian, J., Liu, J., Wang, W., Wang, W., and Chen, X. (2009). “Observation of glassy ferromagnetism in Al-doped 4H-SiC,” J. Am. Chem. Soc. 131, 13761377.
Thomasson, A., Ibrahim, F., Lefevre, C., Autissie, E., Roullan, F., and Mény, C. (2013). “Effects of iron concentration and cationic site disorder on the optical properties of magnetoelectric gallium ferrite thin films,” RSC Adv. 3, 31243130.
Trassin, M., Viart, N., Versini, G., Loison, J. L., Vola, J. P., and Schmerber, G. (2007). “Epitaxial thin films of multiferroic GaFeO3 on conducting indium TiN oxide (001) buffered yttrium-stabilized zirconia (001) by pulsed laser deposition,” Appl. Phys. Lett. 91, 202504.
Wu, Z. P., Bai, G. X., Hu, Q. R., Guo, D. Y., Sun, C. L.; Ji, L. Y., Lei, M., Li, L. H., Li, P. G., Hao, J. H., and Tang, W. H. (2015). “Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga2O3 thin films,” Appl. Phys. Lett. 106, 171910.
Xiao, H. D., Ma, H. L., Xue, C. S., Zhuang, H. Z., Ma, J., and Zong, F. J. (2007). “Synthesis and structural properties of beta-gallium oxide particles from gallium nitride powder,” Mater. Chem. Phys. 101, 99102.
Xu, N., Liu, L., Sun, X., Liu, X., Han, D., and Wang, Y. (2008). “Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories,” Appl. Phys. Lett. 92, 232112.
Yamashita, T. and Hayes, P. (2008). “Analysis of XPS spectra of Fe2+, and Fe3+, ions in oxide materials,” Appl. Surf. Sci. 254, 24412449.

Keywords

Type Description Title
UNKNOWN
Supplementary materials

Yan et al. supplementary material 1
Yan et al. supplementary material

 Unknown (708 KB)
708 KB

Magnetic properties and crystal structure of Ga2−xFexO3

  • Hui Yan (a1) (a2), Yuanqi Huang (a1) (a2), Wei Cui (a1) (a2), Yusong Zhi (a1) (a2), Daoyou Guo (a1) (a2), Zhenping Wu (a1) (a2), Zhengwei Chen (a1) (a2) and Weihua Tang (a1) (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed