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Influence of growth interruption on the formation of solid-state interfaces

Published online by Cambridge University Press:  01 March 2012

I. Busch ,
J. Stümpel  and
M. Krumrey
I. Busch
Affiliation:
Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
J. Stümpel
Affiliation:
Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
M. Krumrey
Affiliation:
Physikalisch-Technische Bundesanstalt, Abbestraße 2-12, 10587 Berlin, Germany
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Abstract

In this study, the effects of growth interruptions on the formation of the interfaces in GaAs∕AlAs multilayers are investigated. For that purpose, a series of different samples has been manufactured with molecular-beam epitaxy. The introduction of growth interruptions of 50 s after the deposition of the layer leads to a change in the morphological properties of the interfaces, in particular their correlation length. These modifications due to the growth interrupt are analyzed with diffuse X-ray scattering. As a result of the measurements, an extension of the lateral correlation length can be proved. By contrast, the vertical correlation of the interfaces is not affected.

Type
X-Ray Diffraction
Information
Powder Diffraction , Volume 21 , Issue 2 , June 2006 , pp. 122 - 124
Copyright
Copyright © Cambridge University Press 2006

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References

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