Symposium H – Silicon Carbide-Materials, Processing, and Devices
Research Article
Epitaxial Growth of SiC on Non-Typical Orientations and MOS Interfaces
- Published online by Cambridge University Press: 21 March 2011, H3.4
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Interface Effects on the Raman Spectra of Si/3C-SiC Superlattices
- Published online by Cambridge University Press: 21 March 2011, H5.38
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Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor
- Published online by Cambridge University Press: 21 March 2011, H2.12
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Ab Initio Study of SiC/Metal Polar Interfaces: Relation Between Interface Structure and Schottky-Barrier Height
- Published online by Cambridge University Press: 21 March 2011, H5.18
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Titanium Tungsten (TiW) for Ohmic contacts to n-and p-type 4H-SiC
- Published online by Cambridge University Press: 21 March 2011, H7.2
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Hollow defect elimination during solution growth of SiC
- Published online by Cambridge University Press: 21 March 2011, H2.2
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Characterization of Light Emission from 4H and 6H SiC MOSFETs
- Published online by Cambridge University Press: 21 March 2011, H4.9
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Structural, optical and chemical characterization of 300°C, MeV ion implanted and 1700°C annealed 6H-SiC
- Published online by Cambridge University Press: 21 March 2011, H5.28
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The Growth and Characterization of Large Diameter Silicon Carbide Substrates
- Published online by Cambridge University Press: 21 March 2011, H5.2
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The Effect of Surface Finish on the Dislocation Density in Sublimation grown SiC Layers
- Published online by Cambridge University Press: 21 March 2011, H1.3
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SiC Crystal Growth from the Vapor and Liquid Phase
- Published online by Cambridge University Press: 21 March 2011, H1.1
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Micromachining Techniques for Advanced SiC MEMS
- Published online by Cambridge University Press: 21 March 2011, H4.3
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Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide
- Published online by Cambridge University Press: 21 March 2011, H3.5
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Oxidation study of hydrogenated amorphous silicon carbide films
- Published online by Cambridge University Press: 21 March 2011, H5.15
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Multi-Axial Channeling Study of Disorder in Gold Implanted 6H-SiC
- Published online by Cambridge University Press: 21 March 2011, H6.3
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Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers with Reduced Micropipe Density
- Published online by Cambridge University Press: 21 March 2011, H2.1
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HTCVD growth of semi-insulating 4H-SiC crystals with low defect density
- Published online by Cambridge University Press: 21 March 2011, H1.2
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Effect of C/B Sequential Implantation on the B Acceptors in 4H-SiC
- Published online by Cambridge University Press: 21 March 2011, H5.32
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Electroluminescence from 4H-SiC Schottky Diodes
- Published online by Cambridge University Press: 21 March 2011, H4.8
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Challenges and State-of-the-Art of Oxides on SiC
- Published online by Cambridge University Press: 21 March 2011, H3.1
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