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Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor

Published online by Cambridge University Press:  21 March 2011

H. Tsuchida ,
I. Kamata ,
T. Jikimoto  and
K. Izumi
H. Tsuchida
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
I. Kamata
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
T. Jikimoto
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
K. Izumi
Affiliation:
Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan
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Abstract

Growth of very thick 4H-SiC epilayers up to 215 μm has been demonstrated in a vertical radiant-heating reactor. Surface roughness is maintained as small as ˜0.2 nm even for epilayers over 150 μm in thickness, and a regular step structure without macro step bunching is observed from the very thick epilayers indicating a stable step-flow growth. Photoluminescence and secondary ion mass spectroscopy (SIMS) were performed for a 150 μm-thick epilayer. The Photoluminescence showed strong free excitons and comparatively small nitrogen bound excitons, while aluminum-, boron- and titanium-related lines were almost negligible. The SIMS analysis found no impurities exceeding 1 × 1014 cm−3. The influence of growth parameters on thickness uniformity will also be shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H2.12
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Chow, T.P., Khemka, V., Fedison, J., Ramungul, N., Matocha, K., Tang, Y., and Gutmann, R.J., Solid-State Electr., 44, 277 (2000).Google Scholar
2. Sugawara, Y., in Extend. Abst. 1st Inter. Workshop on Ultra-Low-Loss Power Device Technology, Nara, Japan, May 31-June 2, 2000.Google Scholar
3. Kordina, O., Irvine, K., Sumakeris, J., Kong, H.S., Paisley, M.J., and Carter, C.H. Jr, Mater. Sci. Forum, 264–268, 107 (1998).Google Scholar
4. Ellison, A., Zhang, J., Magnusson, W., Henry, A., Wahab, Q., Bergman, J.P., Hemmingsson, C., Son, N.T., and Janzén, E., Mater. Sci. Forum, 338–342, 131 (2000).Google Scholar
5. Tsuchida, H., Kamata, I., Jikimoto, T., and Izumi, K., Mater. Sci. Forum, 338–342, 145 (2000).Google Scholar
6. Tsuchida, H., Tsuji, T., Kamata, I., Jikimoto, T., Fujisawa, H., Ogino, S., and Izumi, K., in Proc. 3rd European Conf. on Silicon Carbide and Related Materials, Germany, Sept. 3–7, 2000.Google Scholar
7. Tsuchida, H., Kamata, I., Jikimoto, T., and Izumi, K., in Extend. Abst. 1st Inter. Workshop on Ultra-Low-Loss Power Device Technology, Nara, Japan, May 31-June 2, 2000.Google Scholar
8. Bergman, J.P., Kordina, O., and Janzén, E., Phys. Stat. Sol. (a), 162, 65 (1997).Google Scholar
9. Sridhara, S.G., Eperjesi, T.J., Devaty, R.P., and Choyke, W.J., Mater. Sci. and Engineer., B61–62, 229 (1999).Google Scholar