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Zone-Melt-Recrystallization of Silicon-On-Insulator Films Using a Dual-Lamp Apparatus

Published online by Cambridge University Press:  28 February 2011

S. Ramesh
S. Ramesh*
Affiliation:
Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, NY 10510
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Abstract

We have studied the recrystallization of silicon films using a focused dual-lamp apparatus. By careful measurement and control of the power density profile (and focal-plane location) of the line-image and of the uniformity of the substrate temperature we have achieved recrystallization of SOI films on 4“silicon wafers. By taking advantage of the measured difference in power-density-profiles of an arc lamp and a tungsten lamp in the dual-lamp apparatus we have achieved low temperature-gradient, reduced-stress recrystallization yielding SOI films in which the usual branched pattern of subgrain-boundaries are replaced by individual dislocations. In situ study of the melt- and growth-fronts, was done using a viewing system with a resolution of - 10 ¼m. We have also done studies of stress-relief schemes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 225
Copyright
Copyright © Materials Research Society 1988

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References

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