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Zone-Melting Recrystallization of Silicon on Alumina

Published online by Cambridge University Press:  28 February 2011

T. J. Letavic ,
E. W. Maby  and
R. J. Gutmann
T. J. Letavic
Affiliation:
Department of Electrical, Computer and Systems Engineering Rensselaer Polytechnic Institute, Troy, New York 12180
E. W. Maby
Affiliation:
Department of Electrical, Computer and Systems Engineering Rensselaer Polytechnic Institute, Troy, New York 12180
R. J. Gutmann
Affiliation:
Department of Electrical, Computer and Systems Engineering Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

Polysilicon-on-alumina films have been zone-melt recrystallized with a graphite strip heater. High levels of in-plane stress and stress concentrations due to alumina grain pull-outs cause tensile failure at high temperature. This can be avoided by phosphorus incorporation into an SiOo layer between the polysilicon film and the alumina substrate. The glass layer provides high-temperature viscoelastic strain relief and planarizes the alumina substrate. Double-crystal diffractometry and anisotropic etch techniques indicate that the recrystallized silicon-on-alumina film texture is (100).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 183
Copyright
Copyright © Materials Research Society 1988

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