Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-26T16:24:36.941Z Has data issue: false hasContentIssue false
  • English
  • Français

ZnO Nanostructured Diodes: The Influence of Synthesis Conditions and p-type Material on Device Performance

Published online by Cambridge University Press:  13 June 2012

S.M. Hatch  and
S. Dunn
S.M. Hatch
Affiliation:
School and Engineering and Materials, Queen Mary University of London, E1 4NS, UK
S. Dunn*
Affiliation:
School and Engineering and Materials, Queen Mary University of London, E1 4NS, UK
*
*Email: s.c.dunn@qmul.ac.uk
Get access

Abstract

We produce four distinct ZnO nanorod diode structures that are based on ZnO nanorods produced at pH 6 and pH 11 and have the p-type material PEDOT:PSS (hybrid device) or CuSCN (all inorganic device). After testing the performance of the diodes we show a rectification of 1050 at ±1V in the dark for the inorganic device. The device also exhibits good UV photodetection showing a rapid ca0.1ms turn on and off to a source of illumination. The hybrid devices performed as previously reported with a rectification of 25 at ±1V in both dark and under illumination. We ascribe the performance of the devices to the differences in morphology in the ZnO brought about by the processing conditions and the way in which the p-type layer coats the nanostructure.

Keywords

piezoelectricphotoconductivitynanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 95 - 100
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Weissenrieder, K.S. and Muller, J., Thin Solid Films, 1997. 300(1–2): p. 30–41.CrossRefGoogle Scholar
Zhou, J., Xu, N.S., and Wang, Z.L., Advanced Materials, 2006. 18(18): p. 2432.CrossRefGoogle Scholar
Adamopoulos, G. et al. , App. Phys. Lett., 2009, 95, 133507 CrossRefGoogle Scholar
Qin, Y., Wang, X., and Wang, Z.L., Nature, 2008. 451(7180): p. 809–813.CrossRefGoogle Scholar
Briscoe, J., et al. ., Journal of Materials Chemistry, 2011. 21(8): p. 2517–2523.CrossRefGoogle Scholar
Saito, N., et al. ., Advanced Materials, 2002. 14(6): p. 418–420.3.0.CO;2-K>CrossRefGoogle Scholar
Tsukazaki, A., et al. ., Nature Materials, 2005. 4(1): p. 42–46.CrossRefGoogle Scholar
Vayssieres, L., et al. ., Journal of Physical Chemistry B, 2001. 105(17): p. 3350–3352.CrossRefGoogle Scholar
Yamabi, S. and Imai, H., Journal of Materials Chemistry, 2002. 12(12): p. 3773–3778.CrossRefGoogle Scholar
Briscoe, J., Gallardo, D. E., and Dunn, S, Chemical Communications, 2009. 2009(10): p. 1273–1275.CrossRefGoogle Scholar
Zhang, D.H., Materials Chemistry and Physics, 1996. 45(3): p. 248–252.CrossRefGoogle Scholar
Soci, C., et al. ., Nano Letters, 2007. 7(4): p. 1003–1009.CrossRefGoogle Scholar
Greene, L.E., et al. ., Inorganic chemistry, 2006. 45(19): p. 7535–7543.CrossRefGoogle Scholar
Sugunan, A., et al. ., Journal of Sol-Gel Science and Technology, 2006. 39(1): p. 49–56.CrossRefGoogle Scholar
Strom, J.G. and Jun, H.W., Journal of Pharmaceutical Sciences, 1980. 69(11): p. 1261–1263.CrossRefGoogle Scholar
Govender, K., et al. ., Journal of Materials Chemistry, 2004. 14(16): p. 2575–2591.CrossRefGoogle Scholar