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YMnO3 and YbMnO3 Thin Films for fet type FeRam Application

Published online by Cambridge University Press:  10 February 2011

Norifumi Fujimura ,
Takeshi Yoshimura ,
Daisuke Ito  and
Taichiro Ito
Norifumi Fujimura
Affiliation:
College of Eng., Dept. of Applied Materials Science, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai Osaka 599–8531, Japanfujim@mtl.osakafu-u.ac.Jp
Takeshi Yoshimura
Affiliation:
College of Eng., Dept. of Applied Materials Science, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai Osaka 599–8531, Japanfujim@mtl.osakafu-u.ac.Jp
Daisuke Ito
Affiliation:
College of Eng., Dept. of Applied Materials Science, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai Osaka 599–8531, Japanfujim@mtl.osakafu-u.ac.Jp
Taichiro Ito
Affiliation:
College of Eng., Dept. of Applied Materials Science, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai Osaka 599–8531, Japanfujim@mtl.osakafu-u.ac.Jp
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Abstract

We have been proposing the use of RMnO3 (R: rare earth elements) films for metalferroelectric- semiconductor field effect transistor (MFSFET)-type ferroelectric random access memories (Ferroelectric RAMs). This report describes the progress of YMnO3 and YbMnO3 films for FET type FeRAM application. Although highly (0001)-oriented YMnO3 films are easily obtained on a MgO, ZnO/Sapphire, Pt/Sapphire and Pt/Si substrates, it was very hard to obtain the crystalline films directly on Si or on SiO2/Si substrate. A Y-Mn-O buffer layer improved the crystallinity of the YMnO3 films on Si, and we got the C-V curve with ferroelectric hysteresis. The real ferroelectric component responsible for the C-V hysteresis was calculated to be just 8.4 nC/cm2 by pulse measurements. On the other hand, Y2O3 buffer layer drastically improved the dielectric properties. The window width of the C-V hysteresis does not change by changing the sweep rate and measurement frequency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 237
Copyright
Copyright © Materials Research Society 1999

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References

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