Skip to main content Accessibility help
×
Home

X-ray Topography Studies of Relaxation during the Homo-Epitaxy of 4H-SiC

  • H. Wang (a1), M. Dudley (a1), J. Zhang (a2), B. Thomas (a2), G. Chung (a2), E. K. Sanchez (a2), D. Hansen (a2) and S. G. Mueller (a2)...

Abstract

A review is presented of Synchrotron X-ray Topography and KOH etching studies carried out on n type 4H-SiC offcut substrates before and after homo-epitaxial growth to study defect replication and strain relaxation processes and identify the nucleation sources of both interfacial dislocations (IDs) and half-loop arrays (HLAs) which are known to have a deleterious effect on device performance. We show that these types of defects can nucleate during epilayer growth from: (1) short segments of edge oriented basal plane dislocations (BPDs) in the substrate which are drawn by glide into the epilayer; and (2) segments of half loops of BPD that are attached to the substrate surface prior to growth which also glide into the epilayer. It is shown that the initial motion of the short edge oriented BPD segments that are drawn from the substrate into the epilayer is caused by thermal stress resulting from radial temperature gradients experienced by the wafer whilst in the epi-chamber. This same stress also causes the initial glide of the surface half-loop into the epilayer and through the advancing epilayer surface. These mobile BPD segments provide screw oriented segments that pierce the advancing epilayer surface that initially replicate as the crystal grows. Once critical thickness is reached, according to the Mathews-Blakeslee model [1], these screw segments glide sideways under the action of the mismatch stress leaving IDs and HLAs in their wake. The origin of the mismatch stress is shown to be associated with lattice parameter differences at the growth temperature, arising from the differences in doping concentration between substrate and epilayer.

Copyright

References

Hide All
[1] Matthews, J. and Blakeslee, A., Journal of Crystal Growth 27, 118 (1974).
[2] Jacobson, H., Bergman, J., Hallin, C., Janzén, E., Tuomi, T., and Lendenmann, H., Journal of applied physics 95(3), 1485 (2004).
[3] Ha, S., Skowronski, M., and Lendenmann, H., Journal of applied physics 96(1), 393 (2004).
[4] Stahlbush, R., Fatemi, M., Fedison, J., Arthur, S., Rowland, L., and Wang, S., Journal of electronic materials 31(5), 370 (2002).
[5] Zhang, Z., Moulton, E., and Sudarshan, T.S., Applied Physics Letters 89(8), 081910 (2006).
[6] Zhang, Z. and Sudarshan, T., Applied Physics Letters 87(15), 151913 (2005).
[7] VanMil, B.L., Stahlbush, R.E., Myers-Ward, R.L., Lew, K.K., Eddy, C.R., and Gaskill, D.K., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26(4), 1504 (2008).
[8] Myers-Ward, B.L.V.M. R. L., Stahlbush, R. E., Katz, S. L., McCrate, J. M., Kitt, S. A., Eddy, C. R. Jr., and Gaskill, D. K., Mater. Sci. Forum 105, 615 (2009).
[9] Stahlbush, R.L.M.W. R. E., Vanmill, B. L., Gaskill, D. K., Eddy, C. R. Jr., Mater, . Sci. Forum 271, 645 (2010).
[10] Jacobson, H., Birch, J., Hallin, C., Henry, A., Yakimova, R., Tuomi, T., Janzén, E., and Lindefelt, U., Applied Physics Letters 82(21), 3689 (2003).
[11] Zhang, X., Ha, S., Hanlumnyang, Y., Chou, C.H., Rodriguez, V., Skowronski, M., Sumakeris, J.J., Paisley, M.J., and O’Loughlin, M.J., Journal of Applied Physics 101(5), 053517 (2007).
[12] Zhang, N., Chen, Y., Zhang, Y., Dudley, M., and Stahlbush, R.E., Applied Physics Letters 94(12), 122108 (2009).
[13] Wang, H., Wu, F., Dudley, M., Raghothamachar, B., Chung, G., Zhang, J., Thomas, B., Sanchez, E.K., Mueller, S.G., Hansen, D., and Loboda, M., Materials Science Forum 778780, 328 (2014).
[14] Sasaki, S., Suda, J., and Kimoto, T., Materials Science Forum 717720, 481 (2012).
[15] Raghothamachar, B., Dudley, M., and Dhanaraj, G., in Springer Handbook of Crystal Growth (Springer, 2010), pp. 1425.
[16] Zhang, X., Skowronski, M., Liu, K.X., Stahlbush, R.E., Sumakeris, J.J., Paisley, M.J., and O’Loughlin, M.J., Journal of Applied Physics 102(9), 093520 (2007).
[17] Zhang, X., Miyazawa, T., and Tsuchida, H., Materials Science Forum 717720, 313 (2012).
[18] Huang, X.R., Black, D.R., Macrander, A.T., Maj, J., Chen, Y., and Dudley, M., Applied Physics Letters 91(23), 231903 (2007).
[19] Wang, H.H., Wu, F.Z., Dudley, M., Raghothamachar, B., Chung, G., Zhang, J., Thomas, B., Sanchez, E.K., Mueller, S.G., and Hansen, D.M., presented at the Materials Science Forum, 2014 (unpublished).
[20] Dudley, M., Zhang, N., Zhang, Y., Raghothamachar, B., and Sanchez, E.K., Materials Science Forum 645648, 295 (2010).

Keywords

X-ray Topography Studies of Relaxation during the Homo-Epitaxy of 4H-SiC

  • H. Wang (a1), M. Dudley (a1), J. Zhang (a2), B. Thomas (a2), G. Chung (a2), E. K. Sanchez (a2), D. Hansen (a2) and S. G. Mueller (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed