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X-Ray Scattering (Modeling and Experiment) of InxGa1-xAs/GaAs Multiple Quantum Wells

Published online by Cambridge University Press:  25 February 2011

Jichai Jeong ,
J. C. Lee ,
M. A. Shahid ,
T. E. Schlesinger  and
A. G. Milnes
Jichai Jeong
Affiliation:
Department of Electrical and Computer Engineering
J. C. Lee
Affiliation:
Department of Electrical and Computer Engineering
M. A. Shahid
Affiliation:
Department of Metallurgical Engineering and Materials Science Carnegie Mellon University Pittsburgh, PA 15213
T. E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering
A. G. Milnes
Affiliation:
Department of Electrical and Computer Engineering
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Abstract

X-ray diffraction, transmission electron microscopy (TEM), and photoluminescence measurements have been made on strained InxGa1-xAs/GaAs quantum well structures. The well widths measured from TEM are 187, 115 and 69 Å for an interrupted growth, and 218, 126, 60 Å for a non-interrupted growth. In the measured x-ray diffraction patterns, the Pendellosung fringes due to GaAs barriers are modulated by a broad weak peak mostly coming from the thickest InxGa1-xAs well layer and is fairly symmetric for the noninterrupted sample. For the interrupted quantum well, the x-ray diffraction pattern is less symmetric, since there is further modulation by another broader and weaker peak. This results show that the In content in the InxGa1-xAs well layers are not well controlled for the interrupted quantum well. Using actual thickness measured from TEM, x-ray diffraction patterns are calculated and good agreement is obtained between the measured and the calculated x-ray diffraction patterns. The three strained InxGa1-xAs/Gaks quantum wells grown without interruption produce high intensity and narrow full-width at half-maximum (FWHIM) of 2.9 meV of the photoluminescence peak. The photoluminescence peaks for the interrupted quantum well are relatively broad and asymmetric, and have lower intensities, indicating that better quality InxGa1-xAs/GaAs quantum wells can be grown without interruption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 109
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Kamigaki, K., Sakashita, H., Kato, H., Nakayama, M., Sano, N., and Terauchi, H., Appl. Phys. Lett. 49, 1071(1986)Google Scholar
2.Kervarec, J., Baudet, M., Caulet, J., Auvray, D., Emery, J. Y., and Regreny, A., J. Appl. Cryst. 17, 196(1984)Google Scholar
3.Quillec, M., Goldstein, L., Roux, G. Le, Burgeat, J., and Primot, J., J. Appl. Phys. 55, 2904(1984)Google Scholar
4.Macrander, A. T. and Strege, K. E., J. Appl. Phys. 59, 442(1986)Google Scholar
5.Stacy, W. T. and Janssen, M. M., J. Cryst. Growth 27, 282(1974)Google Scholar
6.Tanaka, M. and Sakaki, H., J. Cryst. Growth 81, 153(1987)Google Scholar
7.Halliwell, M. A. G., Lyons, M. H., and Hill, H. J., J. Cryst. Growth 68, 523(1984)Google Scholar
8.Jeong, J., Schlesinger, T. E. and Milnes, A. G., accepted for J. Crystal GrowthGoogle Scholar
9.Anderson, N. G., Laidig, W. D., Kolbas, R. M., and Lo, Y. C., J. Appl. Phys. 60, 2361(1986)Google Scholar
10.Tu, C. W., Miller, R. C., Willson, B. A., Petroff, P. M., Harris, T. D., Kopf, R. F., Sputz, S. K., and Lamont, M. G., J. Cryst. Growth 81, 159(1987)Google Scholar
11.Lievin, J.-L. and Fonstad, C. G., Appl. Phys. Lett. 51, 1173(1987)Google Scholar