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X-ray Reflectivity Study of Porous Silicon Formation

Published online by Cambridge University Press:  09 August 2011

V. Chamard ,
G. Dolino  and
J. Eymery
V. Chamard
Affiliation:
Laboratoire de Spectrornétrie Physique, UMR 5588 CNRS, Université J. Fourier, BP 87, 38402 Saint Martin d'Hères, FRANCE, virginie.chamard@ujf-grenoble.fr
G. Dolino
Affiliation:
Laboratoire de Spectrornétrie Physique, UMR 5588 CNRS, Université J. Fourier, BP 87, 38402 Saint Martin d'Hères, FRANCE, virginie.chamard@ujf-grenoble.fr
J. Eymery
Affiliation:
Déartement de Recherche Fondamentale sur la Matière Condensée (SP2M/PSC), 17 avenue des Martyrs, CEA-Grenoble, 38054 Grenoble Cedex 9, FRANCE
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Abstract

X-ray reflectometry is used to study the first stages of formation of thin n-type porous silicon layers. Results on classical n−-type porous silicon prepared under illumination are first reported. Then, the effect of the illumination during the formation is observed by comparing n+/− - type samples prepared in darkness or under illumination. X-ray specular reflectivity measurements allow to observe an increase of the surface porosity even for the short formation times and a macroporous layer under the nanoporous layer is also identified for illuminated samples. The presence of a crater at the top of the layer is observed by profilometer measurements, especially in the case of illuminated samples. Specular and diffuse x-ray scattering results show important effects of light during the porous silicon formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 293
Copyright
Copyright © Materials Research Society 1999

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References

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