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X-Ray Measurements of Lattice Strain in Doped Epitaxial Silicon

Published online by Cambridge University Press:  25 February 2011

A. P. Pogany  and
T. E. Preuss
A. P. Pogany
Affiliation:
Microelectronics Technology Centre and Department of Applied Physics, RMIT, Box 2476V, G.P.O. Melbourne 3001, Australia.
T. E. Preuss
Affiliation:
Microelectronics Technology Centre and Department of Applied Physics, RMIT, Box 2476V, G.P.O. Melbourne 3001, Australia.
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Abstract

(100) silicon amorphized by antimony ion implantation was epitaxially regrown by either furnace or pulsed laser annealing. Rocking curves were measured on a double-crystal X-ray diffractometer, and compared with calculations based on a one-dimensional strain profile. For laser annealed samples the strain profile followed that of the antimony (redistributed by surface melting), with a proportionality constant given by the Pauling covalent radius ratio. For furnace annealed samples however the strain was found to be deeper, but of smaller peak magnitude, than that expected from the antimony distribution. This is attributed to formation and movement of defects acting to relax lattice strain. Other X-ray strain measurements on epitaxial silicon containing other dòpants are briefly reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 405
Copyright
Copyright © Materials Research Society 1987

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References

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