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X-Ray Interference Measurements of Ultrathin Semiconductor Layers

Published online by Cambridge University Press:  28 February 2011

C.R. Wie
C.R. Wie*
Affiliation:
State University of New York at Buffalo, Dept. of Electrical and Computer Engineering, Bonner Hall, Amherst, New York 14260
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Abstract

We present various x-ray diffraction phenomena from semiconductor hetero-epitaxial layers. Each of these phenomena gives useful information on the layers. Knowing what to look for in the x-ray rocking curve (XRC) can make this nondestructive technique a very powerful tool for characterization of a few A-several g.tm thick layers We discuss the use of individual Bragg peak, diffraction fringe, and interference structure to obtain layer information. We particularly emphasize the use of x-ray interference in studying buried strained quantum well or quantum barrier layers. We present experimental rocking curves of an AlGaAs/GaAs double heterojunction laser structure and GaInAs/GaAs strained layer superlattices in both <001> and <111> orientations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 467
Copyright
Copyright © Materials Research Society 1989

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